3C-SiC Islands Formation on 6H-SiC(0001) Substrate from a Liquid Phase

Olivier Kim-Hak; Maher Soueidan; Gabriel Ferro; Olivier Dezellus; Ariadne Andreadou; Davy Carole; Efstathios K. Polychroniadis; Jean Claude Viala

doi:10.4028/www.scientific.net/MSF.600-603.203

Paper Titles

Solution Growth of 3C-SiC on 6H-SiC Using Si Solvent under N₂-He Atmosphere
p.187

Solution Growth of 3C-SiC Single Crystals by Cold Crucible Technique
p.191

Growth Mechanism of 3C-SiC Heteroepitaxial Layers on α-SiC by VLS
p.195

Growth Kinetics of 3C-SiC on α-SiC by VLS
p.199

3C-SiC Islands Formation on 6H-SiC(0001) Substrate from a Liquid Phase
p.203

Strain in 3C–SiC Heteroepitaxial Layers Grown on (100) and (111) Oriented Silicon Substrates
p.207

Growth of 3C-SiC on Si: Influence of Process Pressure
p.211

Void Formation in Differently Oriented Si in the Early Stage of SiC Growth
p.215

3C-SiC on Si Substrates Using Pendeo-Epitaxial Growth
p.219

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3C-SiC Islands Formation on 6H-SiC(0001) Substrate from a Liquid Phase

Abstract:

Twin-free 3C-SiC layers were recently obtained by Vapour-Liquid-Solid mechanism on a a-SiC(0001) substrate using Si-Ge melt. The formation of cubic layers is rather unexpected since growth from the melt is known to promote lateral growth and should thus give homoepitaxial layers. The study of the early stage of such growth, after a simple contact between the melt and the substrate (without adding propane), reveals the precipitation of 3C-SiC elongated islands upon the substrate surface. The chemical interactions inside the Ge-Si-C ternary phase diagram suggest an initial dissolution of the SiC seed in contact with a Ge-rich melt (below 1200°C). When the Si content of the melt subsequently increases upon heating, the dissolved carbon atoms precipitate on the seed surface under the form of 3C-SiC islands. When propane is added, these islands enlarge and coalesce to form a complete 3C layer.