Solution Growth of 3C-SiC on 6H-SiC Using Si Solvent under N2-He Atmosphere

Abstract:

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Top seeded solution growth of SiC on on-axis 6H-SiC was performed using Si solvent at growth temperature as high as 1645-1870°C. It was found that different polytypes of SiC layers were grown on 6H-SiC depending on gas species during growth. The growth under He atmosphere produced 6H-SiC homoepitaxial layers. On the other hand, the growth under N2-He atmosphere led to 3C-SiC epitaxial layers. It was obvious that the nitrogen dissolved in solvent strongly favoured the 3C-SiC polytype formation on 6H-SiC. We also conducted characterization of 3C-SiC layers grown on 6H-SiC (0001)Si by TEM, molten KOH etching and precise XRD measurement.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

187-190

DOI:

10.4028/www.scientific.net/MSF.600-603.187

Citation:

K. Kusunoki et al., "Solution Growth of 3C-SiC on 6H-SiC Using Si Solvent under N2-He Atmosphere ", Materials Science Forum, Vols. 600-603, pp. 187-190, 2009

Online since:

September 2008

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Price:

$35.00

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