Solution Growth of 3C-SiC on 6H-SiC Using Si Solvent under N2-He Atmosphere

Kazuhiko Kusunoki; Kazuhito Kamei; Nobuyoshi Yashiro; Takashi Tanaka; Akihiro Yauchi

doi:10.4028/www.scientific.net/MSF.600-603.187

Paper Titles

Growth Mechanism and 2D Aluminum Dopant Distribution of Embedded Trench 4H-SiC Region
p.171

In Situ Nitrogen and Aluminum Doping in Migration Enhanced Embedded Epitaxial Growth of 4H-SiC
p.175

Solution Growth of Off-Axis 4H-SiC for Power Device Application
p.179

Epitaxial TaC Films for the Selective Area Growth of SiC
p.183

Solution Growth of 3C-SiC on 6H-SiC Using Si Solvent under N₂-He Atmosphere
p.187

Solution Growth of 3C-SiC Single Crystals by Cold Crucible Technique
p.191

Growth Mechanism of 3C-SiC Heteroepitaxial Layers on α-SiC by VLS
p.195

Growth Kinetics of 3C-SiC on α-SiC by VLS
p.199

3C-SiC Islands Formation on 6H-SiC(0001) Substrate from a Liquid Phase
p.203

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Solution Growth of 3C-SiC on 6H-SiC Using Si Solvent under N₂-He Atmosphere

Abstract:

Top seeded solution growth of SiC on on-axis 6H-SiC was performed using Si solvent at growth temperature as high as 1645-1870°C. It was found that different polytypes of SiC layers were grown on 6H-SiC depending on gas species during growth. The growth under He atmosphere produced 6H-SiC homoepitaxial layers. On the other hand, the growth under N2-He atmosphere led to 3C-SiC epitaxial layers. It was obvious that the nitrogen dissolved in solvent strongly favoured the 3C-SiC polytype formation on 6H-SiC. We also conducted characterization of 3C-SiC layers grown on 6H-SiC (0001)Si by TEM, molten KOH etching and precise XRD measurement.