Silicon Carbide and Related Materials 2007

Volumes 600-603

doi: 10.4028/

Paper Title Page

Authors: Hideki Shimizu, Akira Kato

Abstract: In order to demonstrate the formation of 3C-SiC film on Si (111) at low substrate temperature, the effects of C3H8 on the crystallinity of...

Authors: Ariadne Andreadou, Jörg Pezoldt, Christian Förster, Efstathios K. Polychroniadis, M. Voelskow, Wolfgang Skorupa

Abstract: One of the main challenging tasks in the prospective technology is the buckling suppression of the 3C-SiC film due to the melting and...

Authors: Ruggero Anzalone, Andrea Severino, Giuseppe D'Arrigo, Corrado Bongiorno, Patrick Fiorenza, Gaetano Foti, Giuseppe Condorelli, Marco Mauceri, Giuseppe Abbondanza, Francesco La Via

Abstract: The aim of this work is to improve the heteroepitaxial growth process of 3C-SiC on Si substrates using Trichlorosilane (SiHCl3) as the...

Authors: Yasuo Hirabayashi, Satoru Kaneko, Kensuke Akiyama

Abstract: The carbonization conditions (acetylene pressure and heating rate) to obtain close carbonized layer covered on Si(001) substrate without...

Authors: Yong Mei Zhao, Guo Sheng Sun, Xing Fang Liu, Jia Ye Li, Wan Shun Zhao, L. Wang, Jin Min Li, Yi Ping Zeng

Abstract: Using AlN as a buffer layer, 3C-SiC film has been grown on Si substrate by low pressure chemical vapor deposition (LPCVD). Firstly growth of...

Authors: Gwiy Sang Chung, Kang San Kim

Abstract: This paper describes the characteristics of poly (Polycrystalline) 3C-SiC grown on SiO2 and AlN buffers, respectively. The crystallinity and...

Authors: Michael Dudley, Yi Chen, Xian Rong Huang, Rong Hui Ma

Abstract: A review is presented of the current understanding of the dislocation configurations observed in PVT-grown 4H- and 6H-SiC boules and...

Authors: Hidekazu Tsuchida, Isaho Kamata, Masahiro Nagano

Abstract: Defect formation in 4H-SiC(0001) and (000-1) epitaxy is investigated by grazing incidence synchrotron reflection X-ray topography and...

Authors: Joshua D. Caldwell, Robert E. Stahlbush, Orest J. Glembocki, Karl D. Hobart, Kendrick X. Liu, Marko J. Tadjer

Abstract: The nucleation and expansion of Shockley stacking faults (SSFs) in 4H-SiC is known to induce an increase in the forward voltage drop (Vf)...

Authors: Junichi Isoya, T. Umeda, N. Mizuochi, Nguyen Tien Son, Erik Janzén, Takeshi Ohshima

Abstract: In EPR (electron paramagnetic resonance) identification of point defects, hyperfine (HF) interaction is decisive information not only for...


Showing 61 to 70 of 330 Paper Titles