Heteroepitaxial Growth of 3C-SiC on Si (111) at Low Substrate Temperature by Plasma Assisted CVD

Hideki Shimizu; Akira Kato

doi:10.4028/www.scientific.net/MSF.600-603.235

Paper Titles

3C-SiC on Si Substrates Using Pendeo-Epitaxial Growth
p.219

Influence of Growth Parameters on the Residual Strain in 3C-SiC Epitaxial Layers on (001) Silicon
p.223

Island Formation of SiC Film on Striated Si(001) Substrates
p.227

Structural and Morphological Characterization of 3C-SiC Films Grown on (111), (211) and (100) Silicon Substrates
p.231

Heteroepitaxial Growth of 3C-SiC on Si (111) at Low Substrate Temperature by Plasma Assisted CVD
p.235

Buckling Stabilization and Stress Reduction in SiC on Si by i-FLASiC Processing
p.239

3C-SiC Heteroepitaxy on (100), (111) and (110) Si Using Trichlorosilane (TCS) as the Silicon Precursor.
p.243

Hetero-Epitaxial Growth of 3C-SiC with Smooth Surface on Si(001) Using Acetylene Gas
p.247

Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate Using AlN as a Buffer Layer
p.251

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Heteroepitaxial Growth of 3C-SiC on Si (111) at Low Substrate Temperature by Plasma Assisted CVD

Abstract:

In order to demonstrate the formation of 3C-SiC film on Si (111) at low substrate temperature, the effects of C3H8 on the crystallinity of the films on Si (111) have been investigated by changing the flow rate of C3H8 at the substrate temperature of 950 °C. Nearly single-crystalline 3C-SiC film grew under the ratio of the flow rate of C3H8 to the flow rate of SiH4 (C/Si) of 2 - 2.5. From these results, it is suggested that C/Si shifts into higher with decreasing the substrate temperature. The crystallinity has been investigated by a reflection electron diffraction (RED) and a X-ray diffraction (XRD). The thickness and the surface roughness of the films were investigated by an ellipsometric measurement.