Buckling Stabilization and Stress Reduction in SiC on Si by i-FLASiC Processing

Ariadne Andreadou; Joerg Pezoldt; Christian Förster; Efstathios K. Polychroniadis; M. Voelskow; Wolfgang Skorupa

doi:10.4028/www.scientific.net/MSF.600-603.239

Paper Titles

Influence of Growth Parameters on the Residual Strain in 3C-SiC Epitaxial Layers on (001) Silicon
p.223

Island Formation of SiC Film on Striated Si(001) Substrates
p.227

Structural and Morphological Characterization of 3C-SiC Films Grown on (111), (211) and (100) Silicon Substrates
p.231

Heteroepitaxial Growth of 3C-SiC on Si (111) at Low Substrate Temperature by Plasma Assisted CVD
p.235

Buckling Stabilization and Stress Reduction in SiC on Si by i-FLASiC Processing
p.239

3C-SiC Heteroepitaxy on (100), (111) and (110) Si Using Trichlorosilane (TCS) as the Silicon Precursor.
p.243

Hetero-Epitaxial Growth of 3C-SiC with Smooth Surface on Si(001) Using Acetylene Gas
p.247

Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate Using AlN as a Buffer Layer
p.251

Characteristics of Polycrystalline 3C-SiC Thin Films Grown on AlN Buffer Layer by CVD
p.255

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Buckling Stabilization and Stress Reduction in SiC...

Buckling Stabilization and Stress Reduction in SiC on Si by i-FLASiC Processing

Abstract:

One of the main challenging tasks in the prospective technology is the buckling suppression of the 3C-SiC film due to the melting and solidification process and the stress relief as a consequence of the short time Si melting during the Flash Lamp Annealing. To overcome this effect and to stabilize a flat surface morphology an alternative i-FlASiC process was developed. This work refers to the influence of the layer stack modifications by doping and meltstop formation by ion implantation on the wafer buckling. The samples were studied by transmission electron microscopy, high resolution x-ray diffraction and infrared ellipsometry. The aim was to optimize the doping and flash lamp annealing conditions in relation to the i-FLASiC layer stack modification.

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Materials Science Forum (Volumes 600-603)

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239-242

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.600-603.239

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September 2008

Authors:

Ariadne Andreadou, Joerg Pezoldt, Christian Förster, Efstathios K. Polychroniadis, M. Voelskow, Wolfgang Skorupa

Keywords:

3C-SiC, Buckling, Characterization, Flash Lamp Annealing

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