Characteristics of Polycrystalline 3C-SiC Thin Films Grown on AlN Buffer Layer by CVD

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This paper describes the characteristics of poly (Polycrystalline) 3C-SiC grown on SiO2 and AlN buffers, respectively. The crystallinity and the bonding structure of poly 3C-SiC grown on each buffer layer were investigated according to various growth temperatures. The crystalline quality of poly 3C-SiC was improved from resulting in decrease of FWHM (Full width half maximum) of XRD and FT-IR by increasing the growth temperature. The minimum growth temperature of poly 3C-SiC was 1100 °C. The surface chemical composition and the electron mobility of poly 3C-SiC grown on each buffer layer were investigated by XPS and Hall Effect. The chemical compositions of surface of poly 3C-SiC grown on SiO2 and AlN were not different. However, their electron mobilities were 7.65 ㎝2/V.s and 14.8 ㎝2/V.s, respectively. Therefore, since the electron mobility of 3C-SiC/AlN was two times higher than that of 3C-SiC/SiO2, AlN is a suitable material, as buffer layer, for SiC growth with excellent crystalline quality.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

255-258

DOI:

10.4028/www.scientific.net/MSF.600-603.255

Citation:

G. S. Chung and K. S. Kim, "Characteristics of Polycrystalline 3C-SiC Thin Films Grown on AlN Buffer Layer by CVD", Materials Science Forum, Vols. 600-603, pp. 255-258, 2009

Online since:

September 2008

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Price:

$35.00

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