Characteristics of Polycrystalline 3C-SiC Thin Films Grown on AlN Buffer Layer by CVD

Gwiy Sang Chung; Kang San Kim

doi:10.4028/www.scientific.net/MSF.600-603.255

Paper Titles

Buckling Stabilization and Stress Reduction in SiC on Si by i-FLASiC Processing
p.239

3C-SiC Heteroepitaxy on (100), (111) and (110) Si Using Trichlorosilane (TCS) as the Silicon Precursor.
p.243

Hetero-Epitaxial Growth of 3C-SiC with Smooth Surface on Si(001) Using Acetylene Gas
p.247

Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate Using AlN as a Buffer Layer
p.251

Characteristics of Polycrystalline 3C-SiC Thin Films Grown on AlN Buffer Layer by CVD
p.255

Aspects of Dislocation Behavior in SiC
p.261

Investigation of Defect Formation in 4H-SiC(0001) and (000-1) Epitaxy
p.267

Temperature Dependence of Shockley Stacking Fault Expansion and Contraction in 4H-SiC p-i-n Diodes
p.273

EPR Identification of Defects and Impurities in SiC: To be Decisive
p.279

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Characteristics of Polycrystalline 3C-SiC Thin Films Grown on AlN Buffer Layer by CVD

Abstract:

This paper describes the characteristics of poly (Polycrystalline) 3C-SiC grown on SiO2 and AlN buffers, respectively. The crystallinity and the bonding structure of poly 3C-SiC grown on each buffer layer were investigated according to various growth temperatures. The crystalline quality of poly 3C-SiC was improved from resulting in decrease of FWHM (Full width half maximum) of XRD and FT-IR by increasing the growth temperature. The minimum growth temperature of poly 3C-SiC was 1100 °C. The surface chemical composition and the electron mobility of poly 3C-SiC grown on each buffer layer were investigated by XPS and Hall Effect. The chemical compositions of surface of poly 3C-SiC grown on SiO2 and AlN were not different. However, their electron mobilities were 7.65 ㎝2/V.s and 14.8 ㎝2/V.s, respectively. Therefore, since the electron mobility of 3C-SiC/AlN was two times higher than that of 3C-SiC/SiO2, AlN is a suitable material, as buffer layer, for SiC growth with excellent crystalline quality.