Investigation of Defect Formation in 4H-SiC(0001) and (000-1) Epitaxy

Hidekazu Tsuchida; Isaho Kamata; Masahiro Nagano

doi:10.4028/www.scientific.net/MSF.600-603.267

Paper Titles

Hetero-Epitaxial Growth of 3C-SiC with Smooth Surface on Si(001) Using Acetylene Gas
p.247

Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate Using AlN as a Buffer Layer
p.251

Characteristics of Polycrystalline 3C-SiC Thin Films Grown on AlN Buffer Layer by CVD
p.255

Aspects of Dislocation Behavior in SiC
p.261

Investigation of Defect Formation in 4H-SiC(0001) and (000-1) Epitaxy
p.267

Temperature Dependence of Shockley Stacking Fault Expansion and Contraction in 4H-SiC p-i-n Diodes
p.273

EPR Identification of Defects and Impurities in SiC: To be Decisive
p.279

Defects Identified in SiC and Their Implications
p.285

Atomic and Electronic Structure of the (2×1) and c(2×2) 4H-SiC(1-102) Surfaces
p.291

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Investigation of Defect Formation in 4H-SiC(0001)...

Investigation of Defect Formation in 4H-SiC(0001) and (000-1) Epitaxy

Abstract:

Defect formation in 4H-SiC(0001) and (000-1) epitaxy is investigated by grazing incidence synchrotron reflection X-ray topography and transmission electron microscopy. Frank-type faults, which are terminated by four Frank partials with a 1/4[0001] type Burgers vector with the same sign on four different basal planes, are confirmed to be formed by conversion of a 1c threading edge dislocation (TSD) in the substrate as well as simultaneous generation of a 1c TSD during epitaxy. The collation between the topography appearance and the microscopic structure and the variety of Frank faults are shown. Formation of carrot defects and threading dislocation clusters are also investigated.