Investigation of Defect Formation in 4H-SiC(0001) and (000-1) Epitaxy

Abstract:

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Defect formation in 4H-SiC(0001) and (000-1) epitaxy is investigated by grazing incidence synchrotron reflection X-ray topography and transmission electron microscopy. Frank-type faults, which are terminated by four Frank partials with a 1/4[0001] type Burgers vector with the same sign on four different basal planes, are confirmed to be formed by conversion of a 1c threading edge dislocation (TSD) in the substrate as well as simultaneous generation of a 1c TSD during epitaxy. The collation between the topography appearance and the microscopic structure and the variety of Frank faults are shown. Formation of carrot defects and threading dislocation clusters are also investigated.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

267-272

DOI:

10.4028/www.scientific.net/MSF.600-603.267

Citation:

H. Tsuchida et al., "Investigation of Defect Formation in 4H-SiC(0001) and (000-1) Epitaxy", Materials Science Forum, Vols. 600-603, pp. 267-272, 2009

Online since:

September 2008

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Price:

$35.00

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