Atomic and Electronic Structure of the (2×1) and c(2×2) 4H-SiC(1-102) Surfaces
The atomic and electronic structure of 4H-SiC(1 1 02) surfaces were investigated using scanning tunneling microscopy (STM), low-energy electron diffraction (LEED) and photoemission (PES). Two well ordered phases existing on this surface, i.e. (2×1) and c(2×2) are discussed. The (2×1) phase consists of a Si adlayer which is topped by an array of ordered Si-nanowires with electronic states confined to one dimension. For the c(2×2) phase STM indicates the presence of adatoms and PES a surface composition close to bulk SiC stoichiometry. A detailed atomic model for this c(2×2) phase is proposed.
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
C. Virojanadara et al., "Atomic and Electronic Structure of the (2×1) and c(2×2) 4H-SiC(1-102) Surfaces", Materials Science Forum, Vols. 600-603, pp. 291-296, 2009