Atomic and Electronic Structure of the (2×1) and c(2×2) 4H-SiC(1-102) Surfaces

Abstract:

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The atomic and electronic structure of 4H-SiC(1 1 02) surfaces were investigated using scanning tunneling microscopy (STM), low-energy electron diffraction (LEED) and photoemission (PES). Two well ordered phases existing on this surface, i.e. (2×1) and c(2×2) are discussed. The (2×1) phase consists of a Si adlayer which is topped by an array of ordered Si-nanowires with electronic states confined to one dimension. For the c(2×2) phase STM indicates the presence of adatoms and PES a surface composition close to bulk SiC stoichiometry. A detailed atomic model for this c(2×2) phase is proposed.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

291-296

DOI:

10.4028/www.scientific.net/MSF.600-603.291

Citation:

C. Virojanadara et al., "Atomic and Electronic Structure of the (2×1) and c(2×2) 4H-SiC(1-102) Surfaces", Materials Science Forum, Vols. 600-603, pp. 291-296, 2009

Online since:

September 2008

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$35.00

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