Atomic and Electronic Structure of the (2×1) and c(2×2) 4H-SiC(1-102) Surfaces

Charíya Virojanadara; M. Hetzel; Leif I. Johansson; Wolfgang J. Choyke; Ulrich Starke

doi:10.4028/www.scientific.net/MSF.600-603.291

Paper Titles

Investigation of Defect Formation in 4H-SiC(0001) and (000-1) Epitaxy
p.267

Temperature Dependence of Shockley Stacking Fault Expansion and Contraction in 4H-SiC p-i-n Diodes
p.273

EPR Identification of Defects and Impurities in SiC: To be Decisive
p.279

Defects Identified in SiC and Their Implications
p.285

Atomic and Electronic Structure of the (2×1) and c(2×2) 4H-SiC(1-102) Surfaces
p.291

Sense Determination of c-Axis Screw Dislocations in 4H-SiC
p.297

Studies of the Distribution of Elementary Threading Screw Dislocations in 4H Silicon Carbide Wafer
p.301

High-Resolution Topography Analysis on Threading Edge Dislocations in 4H-SiC Epilayers
p.305

Observation of Misfit Dislocations Introduced by Epi-Layer Growth on 4H-SiC
p.309

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Atomic and Electronic Structure of the (2×1) and c(2×2) 4H-SiC(1-102) Surfaces

Abstract:

The atomic and electronic structure of 4H-SiC(1 1 02) surfaces were investigated using scanning tunneling microscopy (STM), low-energy electron diffraction (LEED) and photoemission (PES). Two well ordered phases existing on this surface, i.e. (2×1) and c(2×2) are discussed. The (2×1) phase consists of a Si adlayer which is topped by an array of ordered Si-nanowires with electronic states confined to one dimension. For the c(2×2) phase STM indicates the presence of adatoms and PES a surface composition close to bulk SiC stoichiometry. A detailed atomic model for this c(2×2) phase is proposed.