Observation of Misfit Dislocations Introduced by Epi-Layer Growth on 4H-SiC

Hirofumi  Matsuhata; Hirotaka Yamaguchi; Ichiro  Nagai; Toshiyuki Ohno; Ryouji Kosugi; Akimasa Kinoshita

doi:10.4028/www.scientific.net/MSF.600-603.309

Paper Titles

Atomic and Electronic Structure of the (2×1) and c(2×2) 4H-SiC(1-102) Surfaces
p.291

Sense Determination of c-Axis Screw Dislocations in 4H-SiC
p.297

Studies of the Distribution of Elementary Threading Screw Dislocations in 4H Silicon Carbide Wafer
p.301

High-Resolution Topography Analysis on Threading Edge Dislocations in 4H-SiC Epilayers
p.305

Observation of Misfit Dislocations Introduced by Epi-Layer Growth on 4H-SiC
p.309

Dislocation Contrast of 4H-SiC in X-Ray Topography under Weak-Beam Condition
p.313

Evolution of Basal Plane Dislocations during 4H-SiC Epitaxial Growth
p.317

Contrast of Basal Plane and Threading Edge Dislocations in 4H-SiC by X-Ray Topography in Grazing Incidence Geometry
p.321

Slip of Basal Plane Dislocations in 4H-SiC Epitaxy
p.325

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Observation of Misfit Dislocations Introduced by Epi-Layer Growth on 4H-SiC

Abstract:

4H-SiC substrate wafers with epi-layers were observed using monochromatic synchrotron X-ray topography in grazing incidence geometries, to investigate the defects in the epi-layer. Misfit dislocations with b=+1/3[11 2 0] caused by the difference in lattice parameter between the epi-layer and the substrate were observed. The misfit dislocations are located near the interface as edge dislocations, and appear at the top surface as screw dislocations on basal planes. It was observed that more than half of them were introduced from the growing epi-layer surface. The misfit dislocations and some screw dislocations with b=+1/3[11 2 0] are observed to remain as basal plane dislocations at the surface, while other basal plane dislocations were converted to threading edge dislocations in the epi-layer.