Slip of Basal Plane Dislocations in 4H-SiC Epitaxy

Toshiyuki Ohno

doi:10.4028/www.scientific.net/MSF.600-603.325

Paper Titles

Observation of Misfit Dislocations Introduced by Epi-Layer Growth on 4H-SiC
p.309

Dislocation Contrast of 4H-SiC in X-Ray Topography under Weak-Beam Condition
p.313

Evolution of Basal Plane Dislocations during 4H-SiC Epitaxial Growth
p.317

Contrast of Basal Plane and Threading Edge Dislocations in 4H-SiC by X-Ray Topography in Grazing Incidence Geometry
p.321

Slip of Basal Plane Dislocations in 4H-SiC Epitaxy
p.325

Pair-Generation of the Basal-Plane-Dislocation during Crystal Growth of SiC
p.329

Characterization of Dislocations and Micropipes in 4H n⁺ SiC Substrates
p.333

Raman Scattering Study of Stress Distribution around Dislocation in SiC
p.337

Stacking Fault Formation in Highly Nitrogen-Doped 4H-SiC Substrates with Different Surface Preparation Conditions
p.341

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Slip of Basal Plane Dislocations in 4H-SiC Epitaxy

Slip of Basal Plane Dislocations in 4H-SiC Epitaxy

Abstract:

Slip of basal plane dislocations in 4H-SiC epitaxy is observed by synchrotron reflection X-ray topography. It is verified that average slip distance and slip thickness increase with decreasing donor concentration of epilayer. Since N atom, which is incorporated at carbon site in 4H-SiC and acts as a donor, has a smaller radius than that of C atom, lattice contraction effect is expected due to incorporation of N. Considering difference of lattice contraction between the substrate and the epilayer owing to difference of donor concentration, strain in the epilayer is estimated. The strain is expected to increase with decreasing the donor concentration of epilayer and the results are explained from this point of view.