Slip of Basal Plane Dislocations in 4H-SiC Epitaxy

Abstract:

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Slip of basal plane dislocations in 4H-SiC epitaxy is observed by synchrotron reflection X-ray topography. It is verified that average slip distance and slip thickness increase with decreasing donor concentration of epilayer. Since N atom, which is incorporated at carbon site in 4H-SiC and acts as a donor, has a smaller radius than that of C atom, lattice contraction effect is expected due to incorporation of N. Considering difference of lattice contraction between the substrate and the epilayer owing to difference of donor concentration, strain in the epilayer is estimated. The strain is expected to increase with decreasing the donor concentration of epilayer and the results are explained from this point of view.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

325-328

DOI:

10.4028/www.scientific.net/MSF.600-603.325

Citation:

T. Ohno "Slip of Basal Plane Dislocations in 4H-SiC Epitaxy", Materials Science Forum, Vols. 600-603, pp. 325-328, 2009

Online since:

September 2008

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$35.00

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