Pair-Generation of the Basal-Plane-Dislocation during Crystal Growth of SiC

Taro Nishiguchi; Tomoaki Furusho; Toshiyuki Isshiki; Koji Nishio; Hiromu Shiomi; Shigehiro Nishino

doi:10.4028/www.scientific.net/MSF.600-603.329

Paper Titles

Dislocation Contrast of 4H-SiC in X-Ray Topography under Weak-Beam Condition
p.313

Evolution of Basal Plane Dislocations during 4H-SiC Epitaxial Growth
p.317

Contrast of Basal Plane and Threading Edge Dislocations in 4H-SiC by X-Ray Topography in Grazing Incidence Geometry
p.321

Slip of Basal Plane Dislocations in 4H-SiC Epitaxy
p.325

Pair-Generation of the Basal-Plane-Dislocation during Crystal Growth of SiC
p.329

Characterization of Dislocations and Micropipes in 4H n⁺ SiC Substrates
p.333

Raman Scattering Study of Stress Distribution around Dislocation in SiC
p.337

Stacking Fault Formation in Highly Nitrogen-Doped 4H-SiC Substrates with Different Surface Preparation Conditions
p.341

Differences in Emission Spectra of Dislocations in 4H-SiC Epitaxial Layers
p.345

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Pair-Generation of the Basal-Plane-Dislocation...

Pair-Generation of the Basal-Plane-Dislocation during Crystal Growth of SiC

Abstract:

4H-SiC was grown on 4H-SiC (1100) substrates by sublimation boule growth, and transmission electron microscopic investigation was carried out. Two basal-plane-dislocations in the same basal plane (the BPD pair), whose dislocation line extend toward the [1100] growth direction, were observed as aligned along [0001]. The density of the BPD pairs along [0001] was in the same order with that of the stacking faults in the sample. A threading screw-dislocation was observed in between aligned BPD pairs. It is proposed that the interaction between stacking faults and threading screw-dislocations on the grown surface generates the BPD pairs. Since a high density of stacking faults is inherent to the growth on the substrates perpendicular to (0001), keeping an atomically flat grown surface is important to prevent the generation of the threading screw-dislocations, and thus to suppress the generation of the BPD pairs in case of the growth on (1100) and/or (11 2 0) substrates.

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Materials Science Forum (Volumes 600-603)

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329-332

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.600-603.329

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Online since:

September 2008

Authors:

Taro Nishiguchi, Tomoaki Furusho, Toshiyuki Isshiki, Koji Nishio, Hiromu Shiomi, Shigehiro Nishino

Keywords:

(1-100), Basal Plane Dislocation (BPD), Screw-Dislocation, Stacking Fault, TEM Investigation

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References

[1] C. Basceri, I. Khlebnikov, Y. Khlebnikov, P. Muzykov, M. Sharma, G. Stratiy, M. Silan, and C. Barkas: Mater. Sci. Forum Vol. 527-529 (2006), p.39.

DOI: 10.4028/www.scientific.net/msf.527-529.39

Google Scholar

[2] H. Lendenmann, F. Dahlquist, J.P. Bergman, H. Bleichner, and C. Hallin: Mater. Sci. Forum Vol. 389-393 (2002), p.1259.

DOI: 10.4028/www.scientific.net/msf.389-393.1259

Google Scholar

[3] T. Watanabe, Y. Nakao, K. Fujihira, N. Miura, Y. Tarui, M. Imaizumi and T. Oomori: Ext. Abstr. 54th Spring Meet. of the Japan Society of Applied Physics and Related Societies, No. 1 (2007), p.436 (in Japanese).

Google Scholar

[4] S. Tanimoto: Mater. Sci. Forum Vol. 527-529 (2006), p.955.

Google Scholar

[5] D. Nakamura, I. Gunziszima, Y. Yamaguchi, T. Ito, A. Okamoto, H. Kondo, S. Onda, and K. Takatori: Nature Vol. 430 (2004), p.1009.

DOI: 10.1038/nature02810

Google Scholar

[6] J. Takahashi and N. Ohtani: phys. stat. sol. (b) Vol. 202 (1997), p.163.

Google Scholar

[7] H. Tsuchida, I. Kamata, and M. Nagano: J. Cryst. Growth Vol. 306 (2007), P. 254.

Google Scholar