Evolution of Basal Plane Dislocations during 4H-SiC Epitaxial Growth

Robert E. Stahlbush; Brenda L. VanMil; Kendrick X. Liu; Kok Keong Lew; Rachael L. Myers-Ward; D. Kurt Gaskill; Charles R. Eddy; X. Zhang; Marek Skowronski

doi:10.4028/www.scientific.net/MSF.600-603.317

Paper Titles

Studies of the Distribution of Elementary Threading Screw Dislocations in 4H Silicon Carbide Wafer
p.301

High-Resolution Topography Analysis on Threading Edge Dislocations in 4H-SiC Epilayers
p.305

Observation of Misfit Dislocations Introduced by Epi-Layer Growth on 4H-SiC
p.309

Dislocation Contrast of 4H-SiC in X-Ray Topography under Weak-Beam Condition
p.313

Evolution of Basal Plane Dislocations during 4H-SiC Epitaxial Growth
p.317

Contrast of Basal Plane and Threading Edge Dislocations in 4H-SiC by X-Ray Topography in Grazing Incidence Geometry
p.321

Slip of Basal Plane Dislocations in 4H-SiC Epitaxy
p.325

Pair-Generation of the Basal-Plane-Dislocation during Crystal Growth of SiC
p.329

Characterization of Dislocations and Micropipes in 4H n⁺ SiC Substrates
p.333

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Evolution of Basal Plane Dislocations during 4H-SiC Epitaxial Growth

Abstract:

The evolution of basal plane dislocations (BPDs) in 4H-SiC epitaxy during its growth is investigated by using two types of interrupted growth in conjunction with ultraviolet photoluminescence (UVPL) imaging of the dislocations. For the first, each epitaxial growth was stopped after 10-20 μm and a UVPL map was collected. For the second, changing the gas flow interrupted the growth and the BPDs were imaged at the end. The first sequence made it possible to track the formation of half-loop arrays and show that they arise from BPDs that glide perpendicular to the offcut direction. For both types, each interruption causes between 30 – 50% of the BPDs to be converted to threading edge dislocations (TEDs). This result suggests that using interrupted growth may be an alternate method to producing epitaxial layers with low BPD concentration.