High-Resolution Topography Analysis on Threading Edge Dislocations in 4H-SiC Epilayers

Isaho Kamata; Masahiro Nagano; Hidekazu Tsuchida; Yi Chen; Michael Dudley

doi:10.4028/www.scientific.net/MSF.600-603.305

Paper Titles

Defects Identified in SiC and Their Implications
p.285

Atomic and Electronic Structure of the (2×1) and c(2×2) 4H-SiC(1-102) Surfaces
p.291

Sense Determination of c-Axis Screw Dislocations in 4H-SiC
p.297

Studies of the Distribution of Elementary Threading Screw Dislocations in 4H Silicon Carbide Wafer
p.301

High-Resolution Topography Analysis on Threading Edge Dislocations in 4H-SiC Epilayers
p.305

Observation of Misfit Dislocations Introduced by Epi-Layer Growth on 4H-SiC
p.309

Dislocation Contrast of 4H-SiC in X-Ray Topography under Weak-Beam Condition
p.313

Evolution of Basal Plane Dislocations during 4H-SiC Epitaxial Growth
p.317

Contrast of Basal Plane and Threading Edge Dislocations in 4H-SiC by X-Ray Topography in Grazing Incidence Geometry
p.321

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High-Resolution Topography Analysis on Threading Edge Dislocations in 4H-SiC Epilayers

Abstract:

Threading edge dislocations (TEDs) in a 4H-SiC epitaxial layer are investigated using high-resolution synchrotron topography. Six types of TED image are confirmed to correspond to the Burgers vector directions by a comparison of computer simulated images and observed topography images in crystal boundaries. Using a mapping method, a wide spatial distribution of the six types of TED is examined in a quarter section of a 2-inch wafer.