High-Resolution Topography Analysis on Threading Edge Dislocations in 4H-SiC Epilayers
Threading edge dislocations (TEDs) in a 4H-SiC epitaxial layer are investigated using high-resolution synchrotron topography. Six types of TED image are confirmed to correspond to the Burgers vector directions by a comparison of computer simulated images and observed topography images in crystal boundaries. Using a mapping method, a wide spatial distribution of the six types of TED is examined in a quarter section of a 2-inch wafer.
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
I. Kamata et al., "High-Resolution Topography Analysis on Threading Edge Dislocations in 4H-SiC Epilayers ", Materials Science Forum, Vols. 600-603, pp. 305-308, 2009