High-Resolution Topography Analysis on Threading Edge Dislocations in 4H-SiC Epilayers

Abstract:

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Threading edge dislocations (TEDs) in a 4H-SiC epitaxial layer are investigated using high-resolution synchrotron topography. Six types of TED image are confirmed to correspond to the Burgers vector directions by a comparison of computer simulated images and observed topography images in crystal boundaries. Using a mapping method, a wide spatial distribution of the six types of TED is examined in a quarter section of a 2-inch wafer.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

305-308

DOI:

10.4028/www.scientific.net/MSF.600-603.305

Citation:

I. Kamata et al., "High-Resolution Topography Analysis on Threading Edge Dislocations in 4H-SiC Epilayers ", Materials Science Forum, Vols. 600-603, pp. 305-308, 2009

Online since:

September 2008

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Price:

$35.00

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