Defects Identified in SiC and Their Implications

Abstract:

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Defect signatures, such as deep level positions, hyperfine parameters, local vibrational modes and optical transitions characterize a defect and enable the identification of defect centers. This identification is a key to an understanding of complex phenomena like the defect kinetics. Albeit density functional theory enabled the identification of several defects and their kinetic properties, a new approach is needed to address the optical excitation of defect. Within a quasiparticle theory and taking into account excitonic effects we analyze the excited states of VC +.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

285-290

DOI:

10.4028/www.scientific.net/MSF.600-603.285

Citation:

M. Bockstedte et al., "Defects Identified in SiC and Their Implications", Materials Science Forum, Vols. 600-603, pp. 285-290, 2009

Online since:

September 2008

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Price:

$35.00

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