Dislocation Contrast of 4H-SiC in X-Ray Topography under Weak-Beam Condition

Hirotaka Yamaguchi; Hirofumi  Matsuhata; Ichiro  Nagai

doi:10.4028/www.scientific.net/MSF.600-603.313

Paper Titles

Sense Determination of c-Axis Screw Dislocations in 4H-SiC
p.297

Studies of the Distribution of Elementary Threading Screw Dislocations in 4H Silicon Carbide Wafer
p.301

High-Resolution Topography Analysis on Threading Edge Dislocations in 4H-SiC Epilayers
p.305

Observation of Misfit Dislocations Introduced by Epi-Layer Growth on 4H-SiC
p.309

Dislocation Contrast of 4H-SiC in X-Ray Topography under Weak-Beam Condition
p.313

Evolution of Basal Plane Dislocations during 4H-SiC Epitaxial Growth
p.317

Contrast of Basal Plane and Threading Edge Dislocations in 4H-SiC by X-Ray Topography in Grazing Incidence Geometry
p.321

Slip of Basal Plane Dislocations in 4H-SiC Epitaxy
p.325

Pair-Generation of the Basal-Plane-Dislocation during Crystal Growth of SiC
p.329

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Dislocation Contrast of 4H-SiC in X-Ray Topography...

Dislocation Contrast of 4H-SiC in X-Ray Topography under Weak-Beam Condition

Abstract:

We have investigated dislocation image of 4H-SiC wafers projected on synchrotron X-ray topographs taken under different positions in the rocking curve of a diffraction peak. The diffraction geometry was grazing-incidence extremely asymmetric and the diffraction vectors were g = 1 1 2 8 and 112 8. The weak-beam images were demonstrated for basal-plane dislocations and threading-screw dislocations. The basal-plane dislocation images became narrower in width at the off-Bragg conditions, and they were decomposed to separate lines under the weak-beam condition. The threading-screw dislocations showed changes in their shape and contrast as the crystal set was tilted from the rocking-curve peak, and finally the characteristic images near the dislocation core were observed under the weak-beam condition. The origin of these weak-beam images is unclear, but it will offer detailed analysis of the dislocations.