Contrast of Basal Plane and Threading Edge Dislocations in 4H-SiC by X-Ray Topography in Grazing Incidence Geometry

Abstract:

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Dislocations in a substrate wafer of 4H-SiC with an epi-layer were observed using technique of monochromatic synchrotron X-ray topography in a grazing incidence geometry. Six different Burgers vectors of basal plane dislocations and threading edge dislocations were identified by changing the Bragg reflections, and by analysis of images of dislocation. We identify some relations of the Burgers vector and the dislocation contrast observed for g=11 2 8. Some of these relationships are discussed in this report.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

321-324

DOI:

10.4028/www.scientific.net/MSF.600-603.321

Citation:

H. Matsuhata et al., "Contrast of Basal Plane and Threading Edge Dislocations in 4H-SiC by X-Ray Topography in Grazing Incidence Geometry", Materials Science Forum, Vols. 600-603, pp. 321-324, 2009

Online since:

September 2008

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$35.00

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