Contrast of Basal Plane and Threading Edge Dislocations in 4H-SiC by X-Ray Topography in Grazing Incidence Geometry

Hirofumi  Matsuhata; Hirotaka Yamaguchi; Ichiro  Nagai; Toshiyuki Ohno; Ryouji Kosugi; Akimasa Kinoshita

doi:10.4028/www.scientific.net/MSF.600-603.321

Paper Titles

High-Resolution Topography Analysis on Threading Edge Dislocations in 4H-SiC Epilayers
p.305

Observation of Misfit Dislocations Introduced by Epi-Layer Growth on 4H-SiC
p.309

Dislocation Contrast of 4H-SiC in X-Ray Topography under Weak-Beam Condition
p.313

Evolution of Basal Plane Dislocations during 4H-SiC Epitaxial Growth
p.317

Contrast of Basal Plane and Threading Edge Dislocations in 4H-SiC by X-Ray Topography in Grazing Incidence Geometry
p.321

Slip of Basal Plane Dislocations in 4H-SiC Epitaxy
p.325

Pair-Generation of the Basal-Plane-Dislocation during Crystal Growth of SiC
p.329

Characterization of Dislocations and Micropipes in 4H n⁺ SiC Substrates
p.333

Raman Scattering Study of Stress Distribution around Dislocation in SiC
p.337

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Contrast of Basal Plane and Threading Edge Dislocations in 4H-SiC by X-Ray Topography in Grazing Incidence Geometry

Abstract:

Dislocations in a substrate wafer of 4H-SiC with an epi-layer were observed using technique of monochromatic synchrotron X-ray topography in a grazing incidence geometry. Six different Burgers vectors of basal plane dislocations and threading edge dislocations were identified by changing the Bragg reflections, and by analysis of images of dislocation. We identify some relations of the Burgers vector and the dislocation contrast observed for g=11 2 8. Some of these relationships are discussed in this report.