Raman Scattering Study of Stress Distribution around Dislocation in SiC

D. Matsuoka; H. Yamamoto; Shigehiro Nishino; Noriyuki Hasuike; Kenji Kisoda; Hiroshi Harima

doi:10.4028/www.scientific.net/MSF.600-603.337

Paper Titles

Contrast of Basal Plane and Threading Edge Dislocations in 4H-SiC by X-Ray Topography in Grazing Incidence Geometry
p.321

Slip of Basal Plane Dislocations in 4H-SiC Epitaxy
p.325

Pair-Generation of the Basal-Plane-Dislocation during Crystal Growth of SiC
p.329

Characterization of Dislocations and Micropipes in 4H n⁺ SiC Substrates
p.333

Raman Scattering Study of Stress Distribution around Dislocation in SiC
p.337

Stacking Fault Formation in Highly Nitrogen-Doped 4H-SiC Substrates with Different Surface Preparation Conditions
p.341

Differences in Emission Spectra of Dislocations in 4H-SiC Epitaxial Layers
p.345

Expansion of Stacking Faults in 4H-SiC Epitaxial Layer under Laser Light Excitation during Room Temperature Photoluminescence Mapping
p.349

Expansion of Stacking Faults by Electron-Beam Irradiation in 4H-SiC Diode Structure
p.353

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Raman Scattering Study of Stress Distribution...

Raman Scattering Study of Stress Distribution around Dislocation in SiC

Abstract:

We have presented a combined method of microscopic measurements between Raman scattering and polarizing optical microscope to characterize inhomogeneous residual stress distributions around dislocations in 4H- and 6H-SiC wafers. First, stressed portions were found in wafers by an optical polarizing microscope under a crossed Nicole arrangement. Then, the portions were examined by Raman-imaging technique for lateral variations of phonon spectra. The residual stresses were quantified from the phonon-peak frequency shift using a known frequency-shift rate for 6H-SiC. Characterization to the depth direction was also conducted by surface etching with molten KOH. The stresses typically amounted to the order of 100 MPa. In a 4H-SiC homoepitaxial wafer sample, we observed threading dislocations transferred from the substrate to the epitaxial layer, and found that larger stress fields existed in the epitaxial layer than the substrate. We also observed stress distributions around compressively stressed sub-grain boundaries.