We have presented a combined method of microscopic measurements between Raman scattering and polarizing optical microscope to characterize inhomogeneous residual stress distributions around dislocations in 4H- and 6H-SiC wafers. First, stressed portions were found in wafers by an optical polarizing microscope under a crossed Nicole arrangement. Then, the portions were examined by Raman-imaging technique for lateral variations of phonon spectra. The residual stresses were quantified from the phonon-peak frequency shift using a known frequency-shift rate for 6H-SiC. Characterization to the depth direction was also conducted by surface etching with molten KOH. The stresses typically amounted to the order of 100 MPa. In a 4H-SiC homoepitaxial wafer sample, we observed threading dislocations transferred from the substrate to the epitaxial layer, and found that larger stress fields existed in the epitaxial layer than the substrate. We also observed stress distributions around compressively stressed sub-grain boundaries.