Expansion of Stacking Faults in 4H-SiC Epitaxial Layer under Laser Light Excitation during Room Temperature Photoluminescence Mapping

Norihiro Hoshino; Michio Tajima; M. Naitoh; Eiichi Okuno; Shoichi Onda

doi:10.4028/www.scientific.net/MSF.600-603.349

Paper Titles

Characterization of Dislocations and Micropipes in 4H n⁺ SiC Substrates
p.333

Raman Scattering Study of Stress Distribution around Dislocation in SiC
p.337

Stacking Fault Formation in Highly Nitrogen-Doped 4H-SiC Substrates with Different Surface Preparation Conditions
p.341

Differences in Emission Spectra of Dislocations in 4H-SiC Epitaxial Layers
p.345

Expansion of Stacking Faults in 4H-SiC Epitaxial Layer under Laser Light Excitation during Room Temperature Photoluminescence Mapping
p.349

Expansion of Stacking Faults by Electron-Beam Irradiation in 4H-SiC Diode Structure
p.353

Synchrotron X-Ray Topographic Studies of Recombination Activated Shockley Partial Dislocations in 4H-Silicon Carbide Epitaxial Layers
p.357

X-Ray Rocking Curve Characterization of SiC Substrates
p.361

TEM Observation of the Polytype Transformation of Bulk SiC Ingot
p.365

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Expansion of Stacking Faults in 4H-SiC Epitaxial...

Expansion of Stacking Faults in 4H-SiC Epitaxial Layer under Laser Light Excitation during Room Temperature Photoluminescence Mapping

Abstract:

We investigated the expansion of single Shockley stacking faults (SSFs) in a 4H-SiC epitaxial layer under high-intensity scanning laser beam during room temperature photoluminescence mapping, which is similar to the degradation of bipolar pin diodes during forward current injection. In an epitaxial layer on an 8 off-axis (0001) substrate, the SSF-related intensity patterns induced by scanning high-intensity laser beam were classified into two types. The first one was a triangular pattern and the second a pattern which expanded in accordance with the motion of the scanning laser beam. The origins of the SSFs responsible for both patterns are presumably due to the preexisting basal plane dislocations and the dislocation-loops on the basal plane in the epitaxial layer, respectively. On the other hand, most of the SSF-expansion in on-axis (11 2 0) epitaxial layers were similar to the second type in the (0001) epitaxial layer. We, therefore, suggest that the dislocation-loops, which were located close to the surface, were dominant nucleation-sites of the SSFs in the (11 2 0) epitaxial layers.