TEM Observation of the Polytype Transformation of Bulk SiC Ingot

Masahiko Aoki; Megumi Miyazaki; Taro Nishiguchi; Hiroyuki Kinoshita; Masahiro Yoshimoto

doi:10.4028/www.scientific.net/MSF.600-603.365

Paper Titles

Expansion of Stacking Faults in 4H-SiC Epitaxial Layer under Laser Light Excitation during Room Temperature Photoluminescence Mapping
p.349

Expansion of Stacking Faults by Electron-Beam Irradiation in 4H-SiC Diode Structure
p.353

Synchrotron X-Ray Topographic Studies of Recombination Activated Shockley Partial Dislocations in 4H-Silicon Carbide Epitaxial Layers
p.357

X-Ray Rocking Curve Characterization of SiC Substrates
p.361

TEM Observation of the Polytype Transformation of Bulk SiC Ingot
p.365

Structural Analysis of Off-Axis SiC Planes for the Growth of SiC and AlGaN Films
p.369

Delineation of Defects Reducing Schottky Barrier Heights on 4H-SiC by the Electrochemical Deposition
p.373

Investigation of Pits Formed at Oxidation on 4H-SiC
p.377

Intrinsic Defects in HPSI 6H-SiC: an EPR Study
p.381

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603TEM Observation of the Polytype Transformation of...

TEM Observation of the Polytype Transformation of Bulk SiC Ingot

Abstract:

This article describes the analysis of the polytype transformation of SiC ingot. We analyzed the sample by Raman spectroscopy and TEM observation. The result of the analysis shows the polytype is transformed from 4H-SiC to 6H-SiC, and then returned to 4H-SiC. We found that the direction of the c-axis is not the same as the growth direction of the ingot. And also we found the existence of 8H-SiC at the interface between 6H-SiC and 4H-SiC region by the selected area diffraction pattern and confirmed it by HR-TEM observation.