Delineation of Defects Reducing Schottky Barrier Heights on 4H-SiC by the Electrochemical Deposition

Masashi Kato; Kazuya  Ogawa; Masaya Ichimura

doi:10.4028/www.scientific.net/MSF.600-603.373

Paper Titles

Synchrotron X-Ray Topographic Studies of Recombination Activated Shockley Partial Dislocations in 4H-Silicon Carbide Epitaxial Layers
p.357

X-Ray Rocking Curve Characterization of SiC Substrates
p.361

TEM Observation of the Polytype Transformation of Bulk SiC Ingot
p.365

Structural Analysis of Off-Axis SiC Planes for the Growth of SiC and AlGaN Films
p.369

Delineation of Defects Reducing Schottky Barrier Heights on 4H-SiC by the Electrochemical Deposition
p.373

Investigation of Pits Formed at Oxidation on 4H-SiC
p.377

Intrinsic Defects in HPSI 6H-SiC: an EPR Study
p.381

Defect Level of the Carbon Vacancy-Carbon Antisite Pair Center in SI 4H SiC
p.385

Behavior of Native Defects in Semi-Insulating 4H-SiC after High Temperature Anneals and Different Cool-Down Rates
p.389

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Delineation of Defects Reducing Schottky Barrier...

Delineation of Defects Reducing Schottky Barrier Heights on 4H-SiC by the Electrochemical Deposition

Abstract:

We identified regions with low Schottky barrier height on 4H-SiC surfaces by the electrochemical deposition of ZnO. When we adopt an appropriate deposition voltage, ZnO grew preferentially at the regions with the low Schottky barrier height. Thus, we were able to identify the ZnO film only at these regions if we stopped the deposition at a proper time. We compared positions of the deposited film and etch pit after molten NaOH etching. As a result, in a bulk 4H-SiC, the films were deposited around some of micropipe positions. On the other hand, in an epitaxial 4H-SiC layer, although approximately a half of deposited films seemed to grow at the etch-pit defect positions, other deposited films were grown at positions without etch-pit defects. Therefore the Schottky barrier heights were reduced by not only defects emerging as etch pits but also other kind of origins in epitaxial 4H-SiC.