Investigation of Pits Formed at Oxidation on 4H-SiC

Yuki Nakano; T. Nakamura; A. Kamisawa; H. Takasu

doi:10.4028/www.scientific.net/MSF.600-603.377

Paper Titles

X-Ray Rocking Curve Characterization of SiC Substrates
p.361

TEM Observation of the Polytype Transformation of Bulk SiC Ingot
p.365

Structural Analysis of Off-Axis SiC Planes for the Growth of SiC and AlGaN Films
p.369

Delineation of Defects Reducing Schottky Barrier Heights on 4H-SiC by the Electrochemical Deposition
p.373

Investigation of Pits Formed at Oxidation on 4H-SiC
p.377

Intrinsic Defects in HPSI 6H-SiC: an EPR Study
p.381

Defect Level of the Carbon Vacancy-Carbon Antisite Pair Center in SI 4H SiC
p.385

Behavior of Native Defects in Semi-Insulating 4H-SiC after High Temperature Anneals and Different Cool-Down Rates
p.389

Characterization of Traps in Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy
p.393

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Investigation of Pits Formed at Oxidation on 4H-SiC

Abstract:

We report an experimental investigation of the pits formed at oxidation. The pits were formed by a long time oxidation in a dry or wet atmosphere at high temperature (~ 1200 oC). Although they were observed in (0001) face, they were not in (000-1) face. Comparing the points of oxidation pits to those of molten KOH etching pits on the same area of the substrate, we show that the oxidation pits are formed by oxidizing defects. In addition, the influence of the oxidation pits to the reliability of thermal oxide was researched.