Characterization of Traps in Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy

Abstract:

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In order to characterize traps in semi-insulating 4H-SiC that is regarded as an attractive semiconductor for X-ray detectors, we apply discharge current transient spectroscopy (DCTS) that is a graphical peak analysis method based on the transient reverse current of a diode. We have found at least three types of traps whose emission rates at 373 K are 4.9×10-3, 8.3×10-3 and 8.0×10-2 s-1. Since it is difficult to characterize traps in semi-insulating semiconductors by transient capacitance methods, it is demonstrated that DCTS is a powerful method for determining the densities and emission rates of traps in semi-insulating semiconductors.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

393-396

DOI:

10.4028/www.scientific.net/MSF.600-603.393

Citation:

M. Takahashi and H. Matsuura, "Characterization of Traps in Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy", Materials Science Forum, Vols. 600-603, pp. 393-396, 2009

Online since:

September 2008

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$35.00

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