Characterization of Traps in Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy

Miyuki Takahashi; Hideharu Matsuura

doi:10.4028/www.scientific.net/MSF.600-603.393

Paper Titles

Investigation of Pits Formed at Oxidation on 4H-SiC
p.377

Intrinsic Defects in HPSI 6H-SiC: an EPR Study
p.381

Defect Level of the Carbon Vacancy-Carbon Antisite Pair Center in SI 4H SiC
p.385

Behavior of Native Defects in Semi-Insulating 4H-SiC after High Temperature Anneals and Different Cool-Down Rates
p.389

Characterization of Traps in Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy
p.393

The Electronic Structure of the UD-4 Defect in 4H, 6H and 15R SiC
p.397

Deep Levels Responsible for Semi-Insulating Behavior in Vanadium-Doped 4H-SiC Substrates
p.401

Contact-Less Electrical Defect Characterization of Semi-Insulating 6H-SiC Bulk Material
p.405

Photo-EPR Study of Vacancy-Type Defects in Irradiated n-Type 4H-SiC
p.409

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Characterization of Traps in Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy

Abstract:

In order to characterize traps in semi-insulating 4H-SiC that is regarded as an attractive semiconductor for X-ray detectors, we apply discharge current transient spectroscopy (DCTS) that is a graphical peak analysis method based on the transient reverse current of a diode. We have found at least three types of traps whose emission rates at 373 K are 4.9×10-3, 8.3×10-3 and 8.0×10-2 s-1. Since it is difficult to characterize traps in semi-insulating semiconductors by transient capacitance methods, it is demonstrated that DCTS is a powerful method for determining the densities and emission rates of traps in semi-insulating semiconductors.