Photo-EPR Study of Vacancy-Type Defects in Irradiated n-Type 4H-SiC
We report photo-induced electron paramagnetic resonance (photo-EPR) data for irradiated n-type 4H-SiC. Energy levels and associated photo-induced transitions are discussed for silicon vacancy (VSi), carbon vacancy (VC), carbon antisite-vacancy pair (CSiVC), and divacancy (VSiVC).
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
T. Umeda et al., "Photo-EPR Study of Vacancy-Type Defects in Irradiated n-Type 4H-SiC", Materials Science Forum, Vols. 600-603, pp. 409-412, 2009