Photo-EPR Study of Vacancy-Type Defects in Irradiated n-Type 4H-SiC

T. Umeda; Norio Morishita; Takeshi Ohshima; Hisayoshi Itoh; Junichi Isoya

doi:10.4028/www.scientific.net/MSF.600-603.409

Paper Titles

Characterization of Traps in Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy
p.393

The Electronic Structure of the UD-4 Defect in 4H, 6H and 15R SiC
p.397

Deep Levels Responsible for Semi-Insulating Behavior in Vanadium-Doped 4H-SiC Substrates
p.401

Contact-Less Electrical Defect Characterization of Semi-Insulating 6H-SiC Bulk Material
p.405

Photo-EPR Study of Vacancy-Type Defects in Irradiated n-Type 4H-SiC
p.409

New Type of Defects Explored by Theory: Silicon Interstitial Clusters in SiC
p.413

Effect of the Schottky Barrier Height on the Detection of Midgap Levels in 4H-SiC by Deep Level Transient Spectroscopy
p.417

Search for Hydrogen Related Defects in p-Type 6H and 4H-SiC
p.421

Carrier Removal in Electron Irradiated 4H and 6H SiC
p.425

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Photo-EPR Study of Vacancy-Type Defects in Irradiated n-Type 4H-SiC

Abstract:

We report photo-induced electron paramagnetic resonance (photo-EPR) data for irradiated n-type 4H-SiC. Energy levels and associated photo-induced transitions are discussed for silicon vacancy (VSi), carbon vacancy (VC), carbon antisite-vacancy pair (CSiVC), and divacancy (VSiVC).