Photo-EPR Study of Vacancy-Type Defects in Irradiated n-Type 4H-SiC

Abstract:

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We report photo-induced electron paramagnetic resonance (photo-EPR) data for irradiated n-type 4H-SiC. Energy levels and associated photo-induced transitions are discussed for silicon vacancy (VSi), carbon vacancy (VC), carbon antisite-vacancy pair (CSiVC), and divacancy (VSiVC).

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

409-412

DOI:

10.4028/www.scientific.net/MSF.600-603.409

Citation:

T. Umeda et al., "Photo-EPR Study of Vacancy-Type Defects in Irradiated n-Type 4H-SiC", Materials Science Forum, Vols. 600-603, pp. 409-412, 2009

Online since:

September 2008

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Price:

$35.00

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