Deep Levels Responsible for Semi-Insulating Behavior in Vanadium-Doped 4H-SiC Substrates

Abstract:

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Semi-insulating (SI) 4H-SiC substrates doped with vanadium (V) in the range 5.5×1015 –1.1×1017 cm–3 were studied by electron paramagnetic resonance. We show that only in heavily V-doped 4H-SiC vanadium is responsible for the SI behavior, whereas in moderate V-doped substrates with the V concentration comparable or slightly higher than that of the shallow N donor or B acceptor, the SI properties are thermally unstable and determined by intrinsic defects. The results show that the commonly observed thermal activation energy Ea~1.1 eV in V-doped 4H-SiC, which was previously assigned to the single acceptor V4+/3+ level, may be related to deep levels of the carbon vacancy. Carrier compensation processes involving deep levels of V and intrinsic defects are discussed and possible thermal activation energies are suggested.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

401-404

DOI:

10.4028/www.scientific.net/MSF.600-603.401

Citation:

N. T. Son et al., "Deep Levels Responsible for Semi-Insulating Behavior in Vanadium-Doped 4H-SiC Substrates", Materials Science Forum, Vols. 600-603, pp. 401-404, 2009

Online since:

September 2008

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Price:

$35.00

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