New Type of Defects Explored by Theory: Silicon Interstitial Clusters in SiC

Adam Gali; T. Hornos; Nguyen Tien Son; Erik Janzén

doi:10.4028/www.scientific.net/MSF.600-603.413

Paper Titles

The Electronic Structure of the UD-4 Defect in 4H, 6H and 15R SiC
p.397

Deep Levels Responsible for Semi-Insulating Behavior in Vanadium-Doped 4H-SiC Substrates
p.401

Contact-Less Electrical Defect Characterization of Semi-Insulating 6H-SiC Bulk Material
p.405

Photo-EPR Study of Vacancy-Type Defects in Irradiated n-Type 4H-SiC
p.409

New Type of Defects Explored by Theory: Silicon Interstitial Clusters in SiC
p.413

Effect of the Schottky Barrier Height on the Detection of Midgap Levels in 4H-SiC by Deep Level Transient Spectroscopy
p.417

Search for Hydrogen Related Defects in p-Type 6H and 4H-SiC
p.421

Carrier Removal in Electron Irradiated 4H and 6H SiC
p.425

Evolution of D₁-Defect Center in 4H-SiC during High Temperature Annealing
p.429

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New Type of Defects Explored by Theory: Silicon Interstitial Clusters in SiC

Abstract:

We have studied the small clusters of silicon and carbon interstitials by ab initio supercell calculations in 4H-SiC. We found that silicon interstitials can form stable and electrically active complexes with each other or with a carbon interstitial. Local vibration modes and ionization energies were also calculated in order to help the identification of the defects. We propose that silicon interstitials can emit from these clusters at relatively high temperatures, which may play an important role in the formation of the DI center.