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Carrier Removal in Electron Irradiated 4H and 6H SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Carrier Removal in Electron Irradiated 4H and 6H...

Carrier Removal in Electron Irradiated 4H and 6H SiC

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Silicon Carbide and Related Materials 2007

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Periodical:

Materials Science Forum (Volumes 600-603)

Pages:

425-428

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.600-603.425

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Online since:

September 2008

Authors:

Mads Mikelsen, Ulrike Grossner, Jan H. Bleka, Edouard V. Monakhov, Bengt Gunnar Svensson, Rositza Yakimova, Anne Henry, Erik Janzén, Alexander A. Lebedev

Keywords:

4H-SiC, 6H-SiC, Annealing, As, CV, Deep Level, DLTS, Electron Irradiation

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© 2009 Trans Tech Publications Ltd. All Rights Reserved

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