Search for Hydrogen Related Defects in p-Type 6H and 4H-SiC

Abstract:

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Al-doped 4H and 6H epitaxial layers have been implanted with 200 keV hydrogen or irradiated with 1 MeV electrons. Heat treatments have been carried out up to 1000 °C and electrical characterization, by means of deep level transient spectroscopy (DLTS), has been performed after every annealing treatment in the 100-750 K temperature range. We have detected several deep levels and the possible involvement of hydrogen in the microscopic structure of these defects is discussed in the light of their thermal stability and previous results found in the literature. All the detected defects, except for a level located at 0.55 eV above the valence band (Ev), do not display any electric field dependence of their emission time constant.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

421-424

DOI:

10.4028/www.scientific.net/MSF.600-603.421

Citation:

G. Alfieri and T. Kimoto, "Search for Hydrogen Related Defects in p-Type 6H and 4H-SiC ", Materials Science Forum, Vols. 600-603, pp. 421-424, 2009

Online since:

September 2008

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$35.00

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