Search for Hydrogen Related Defects in p-Type 6H and 4H-SiC

Giovanni Alfieri; Tsunenobu Kimoto

doi:10.4028/www.scientific.net/MSF.600-603.421

Paper Titles

Contact-Less Electrical Defect Characterization of Semi-Insulating 6H-SiC Bulk Material
p.405

Photo-EPR Study of Vacancy-Type Defects in Irradiated n-Type 4H-SiC
p.409

New Type of Defects Explored by Theory: Silicon Interstitial Clusters in SiC
p.413

Effect of the Schottky Barrier Height on the Detection of Midgap Levels in 4H-SiC by Deep Level Transient Spectroscopy
p.417

Search for Hydrogen Related Defects in p-Type 6H and 4H-SiC
p.421

Carrier Removal in Electron Irradiated 4H and 6H SiC
p.425

Evolution of D₁-Defect Center in 4H-SiC during High Temperature Annealing
p.429

The Formation and Annealing of Carbon Interstitial-Related Complexes in Electron-, Proton- and Helium Irradiated 4H SiC
p.433

Identification of Neutral Carbon Vacancy-Carbon Anti-Site Complex by Low Temperature Photoluminescence Spectroscopy
p.437

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Search for Hydrogen Related Defects in p-Type 6H and 4H-SiC

Abstract:

Al-doped 4H and 6H epitaxial layers have been implanted with 200 keV hydrogen or irradiated with 1 MeV electrons. Heat treatments have been carried out up to 1000 °C and electrical characterization, by means of deep level transient spectroscopy (DLTS), has been performed after every annealing treatment in the 100-750 K temperature range. We have detected several deep levels and the possible involvement of hydrogen in the microscopic structure of these defects is discussed in the light of their thermal stability and previous results found in the literature. All the detected defects, except for a level located at 0.55 eV above the valence band (Ev), do not display any electric field dependence of their emission time constant.