Effect of the Schottky Barrier Height on the Detection of Midgap Levels in 4H-SiC by Deep Level Transient Spectroscopy

Sergey A. Reshanov; Gerhard Pensl; Katsunori Danno; Tsunenobu Kimoto; Shigeomi Hishiki; Takeshi Ohshima; Fei Yan; Robert P. Devaty; Wolfgang J. Choyke

doi:10.4028/www.scientific.net/MSF.600-603.417

Paper Titles

Deep Levels Responsible for Semi-Insulating Behavior in Vanadium-Doped 4H-SiC Substrates
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Contact-Less Electrical Defect Characterization of Semi-Insulating 6H-SiC Bulk Material
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Photo-EPR Study of Vacancy-Type Defects in Irradiated n-Type 4H-SiC
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New Type of Defects Explored by Theory: Silicon Interstitial Clusters in SiC
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Effect of the Schottky Barrier Height on the Detection of Midgap Levels in 4H-SiC by Deep Level Transient Spectroscopy
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Search for Hydrogen Related Defects in p-Type 6H and 4H-SiC
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Carrier Removal in Electron Irradiated 4H and 6H SiC
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Evolution of D₁-Defect Center in 4H-SiC during High Temperature Annealing
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The Formation and Annealing of Carbon Interstitial-Related Complexes in Electron-, Proton- and Helium Irradiated 4H SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Effect of the Schottky Barrier Height on the...

Effect of the Schottky Barrier Height on the Detection of Midgap Levels in 4H-SiC by Deep Level Transient Spectroscopy

Abstract:

The effect of the Schottky barrier height on the detection of the midgap defects EH6 and EH7 in 4H-SiC by deep level transient spectroscopy (DLTS) is systematically studied. The results show that the DLTS peak height - and as a consequence the observed defect concentration - increases with the increasing barrier height and saturates above 1.5 eV for EH6 and above 1.7 eV for EH7, while below 1.1 eV the DLTS peak height completely disappears. A model is applied, which determines the position of the quasi-Fermi level in the space charge region as a function of the barrier height and of the reverse bias applied and which explains the variation of the DLTS peak height.