Evolution of D1-Defect Center in 4H-SiC during High Temperature Annealing

Serguei I. Maximenko; Jaime A. Freitas; N.Y. Garces; E.R. Glaser; Mark A. Fanton

doi:10.4028/www.scientific.net/MSF.600-603.429

Paper Titles

New Type of Defects Explored by Theory: Silicon Interstitial Clusters in SiC
p.413

Effect of the Schottky Barrier Height on the Detection of Midgap Levels in 4H-SiC by Deep Level Transient Spectroscopy
p.417

Search for Hydrogen Related Defects in p-Type 6H and 4H-SiC
p.421

Carrier Removal in Electron Irradiated 4H and 6H SiC
p.425

Evolution of D₁-Defect Center in 4H-SiC during High Temperature Annealing
p.429

The Formation and Annealing of Carbon Interstitial-Related Complexes in Electron-, Proton- and Helium Irradiated 4H SiC
p.433

Identification of Neutral Carbon Vacancy-Carbon Anti-Site Complex by Low Temperature Photoluminescence Spectroscopy
p.437

Ionization Energies of Phosphorus Donors in 6H-SiC
p.441

Wave-Function Symmetry and the Properties of Shallow P Donors in 4H SiC
p.445

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Evolution of D1-Defect Center in 4H-SiC during...

Evolution of D₁-Defect Center in 4H-SiC during High Temperature Annealing

Abstract:

The behavior of the D1 center in semi-insulating 4H-SiC substrates revealed by low-temperature photoluminescence was investigated after post-growth high temperature anneals between 1400 and 2400oC. The influence of different post-anneal cooling rates was also studied. The optical signature of D1 was observed up to 2400oC with intensity maxima at 1700 and 2200oC. We propose that the peak at 1700°C can be related to the formation and subsequent dissociation of SiC native defects. It was found that changes in the post-annealing cooling rate drastically influence the behavior of the D1 center and the concentrations of the VC, VSi, VC-VSi and VC-CSi lattice defects.