Ionization Energies of Phosphorus Donors in 6H-SiC

Frank Schmid; Kurt Semmelroth; M. Krieger; Heiko B. Weber; Gerhard Pensl; Eugene E. Haller

doi:10.4028/www.scientific.net/MSF.600-603.441

Paper Titles

Carrier Removal in Electron Irradiated 4H and 6H SiC
p.425

Evolution of D₁-Defect Center in 4H-SiC during High Temperature Annealing
p.429

The Formation and Annealing of Carbon Interstitial-Related Complexes in Electron-, Proton- and Helium Irradiated 4H SiC
p.433

Identification of Neutral Carbon Vacancy-Carbon Anti-Site Complex by Low Temperature Photoluminescence Spectroscopy
p.437

Ionization Energies of Phosphorus Donors in 6H-SiC
p.441

Wave-Function Symmetry and the Properties of Shallow P Donors in 4H SiC
p.445

Infrared PL Signatures of n-Type Bulk SiC Substrates with Nitrogen Impurity Concentration between 10¹⁶ and 10¹⁷ cm^-3
p.449

A Comparison of Transient Boron Diffusion in Silicon, Silicon Carbide and Diamond
p.453

Diffusion and Electroluminescence Studies of Low Temperature Diffusion of Boron in 3C-SiC
p.457

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Ionization Energies of Phosphorus Donors in 6H-SiC

Ionization Energies of Phosphorus Donors in 6H-SiC

Abstract:

6H-SiC was doped with phosphorus (P) donors by neutron transmutation. IR transmission spectra were taken in the temperature range from 6 K to 300 K. A great number of absorption lines is observed at temperatures below 140 K; these lines are attributed to transitions of the donor electron between ground states and bound excited states of P-related donors. Based on Faulkner's theory, three series of effective-mass-like states (P1, P2, P3) could be identified. The corresponding ground state energies are: E(P1) = EC - 91.5 meV, E(P2) = EC - 81.8 meV, E(P3) = EC - 73.5 meV.