Diffusion and Electroluminescence Studies of Low Temperature Diffusion of Boron in 3C-SiC

I.G. Atabaev; Chin Che Tin; B.G. Atabaev; T.M. Saliev; E.N. Bakhranov; N.A. Matchanov; S.L. Lutpullaev; J. Zhang; N.G. Saidkhanova; F.R. Yuzikaeva; I. Nuritdinov; A. Kh. Islomov; M.Z. Amanov; Rusli Rusli; A. Kumta

doi:10.4028/www.scientific.net/MSF.600-603.457

Paper Titles

Ionization Energies of Phosphorus Donors in 6H-SiC
p.441

Wave-Function Symmetry and the Properties of Shallow P Donors in 4H SiC
p.445

Infrared PL Signatures of n-Type Bulk SiC Substrates with Nitrogen Impurity Concentration between 10¹⁶ and 10¹⁷ cm^-3
p.449

A Comparison of Transient Boron Diffusion in Silicon, Silicon Carbide and Diamond
p.453

Diffusion and Electroluminescence Studies of Low Temperature Diffusion of Boron in 3C-SiC
p.457

Raman Investigation of the Effect of Metal Impurities at Gettering Sites on Phonon and Electron Related Properties of 4H-SiC n-n⁺ Junctions
p.465

Nitrogen Passivation of (0001) 4H-SiC Dangling Bonds
p.469

Origin of Giant Step Bunching on 4H-SiC (0001) Surfaces
p.473

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Diffusion and Electroluminescence Studies of Low Temperature Diffusion of Boron in 3C-SiC

Abstract:

The characteristics of boron diffusion in 3C-SiC at low temperature have been measured using spreading resistance technique and electroluminescence spectroscopy. The coefficient of boron diffusion in the temperature range of 1150 –1250°С has been found to be about 5.5 x 10-11–5.0 x 10-10 cm2/sec and the activation energy of boron diffusion was determined to be about 0.9 –1.15 eV. Electroluminescence spectra of 3C-SiC p-n junction structures showed peaks at 750 and 630 nm due to growth defects and carbon-silicon divacancies respectively.