Diffusion and Electroluminescence Studies of Low Temperature Diffusion of Boron in 3C-SiC
The characteristics of boron diffusion in 3C-SiC at low temperature have been measured using spreading resistance technique and electroluminescence spectroscopy. The coefficient of boron diffusion in the temperature range of 1150 –1250°С has been found to be about 5.5 x 10-11–5.0 x 10-10 cm2/sec and the activation energy of boron diffusion was determined to be about 0.9 –1.15 eV. Electroluminescence spectra of 3C-SiC p-n junction structures showed peaks at 750 and 630 nm due to growth defects and carbon-silicon divacancies respectively.
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
I.G. Atabaev et al., "Diffusion and Electroluminescence Studies of Low Temperature Diffusion of Boron in 3C-SiC", Materials Science Forum, Vols. 600-603, pp. 457-460, 2009