Nitrogen Passivation of (0001) 4H-SiC Dangling Bonds

Abstract:

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We report a density functional theory study of N and NO passivation of surface dangling bonds at the Si-face of (0001) 4H-SiC. Results agree with many key experimental findings in nitrogen processed devices including: observed interface N coverage and characteristic changes in Dit. Dangling bonds at the SiC surface are fully passivated by 1/3 ML N or NO coverage. Upon passivation the surface is found to incur negligible strain and no reconstruction. Allowing atomic O to interact with the 1/3 ML N or NO passivated surface, we find oxygen prefers to incorporate into SiO2 rather than adsorb to the surface. This indicates the possibility of oxide deposition onto nitrogen passivated (0001) 4H-SiC surfaces.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

469-472

DOI:

10.4028/www.scientific.net/MSF.600-603.469

Citation:

G. Pennington and C.R. Ashman, "Nitrogen Passivation of (0001) 4H-SiC Dangling Bonds", Materials Science Forum, Vols. 600-603, pp. 469-472, 2009

Online since:

September 2008

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Price:

$35.00

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