Raman Investigation of the Effect of Metal Impurities at Gettering Sites on Phonon and Electron Related Properties of 4H-SiC n-n+ Junctions

Michel Kazan; Laurent Ottaviani; Pierre M. Masri

doi:10.4028/www.scientific.net/MSF.600-603.465

Paper Titles

Infrared PL Signatures of n-Type Bulk SiC Substrates with Nitrogen Impurity Concentration between 10¹⁶ and 10¹⁷ cm^-3
p.449

A Comparison of Transient Boron Diffusion in Silicon, Silicon Carbide and Diamond
p.453

Diffusion and Electroluminescence Studies of Low Temperature Diffusion of Boron in 3C-SiC
p.457

Raman Investigation of the Effect of Metal Impurities at Gettering Sites on Phonon and Electron Related Properties of 4H-SiC n-n⁺ Junctions
p.465

Nitrogen Passivation of (0001) 4H-SiC Dangling Bonds
p.469

Origin of Giant Step Bunching on 4H-SiC (0001) Surfaces
p.473

Enhanced Annealing of the Main Lifetime Limiting Defect in Thick 4H-SiC Layers
p.477

Impact of 4H-SiC Substrate Defectivity on Epilayer Injected Carrier Lifetimes
p.481

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Raman Investigation of the Effect of Metal Impurities at Gettering Sites on Phonon and Electron Related Properties of 4H-SiC n-n⁺ Junctions

Abstract:

We report on the application of introducing gettering sites as an approach to control some phonons and charge carrier related properties in 4H-SiC epilayer. Helium implantation (at room temperature or 750°C) was first carried out, followed by a proper annealing and gold diffusion, in order to check the gettering efficiency. Raman measurements showed the presence of the desired defect, introduced by ion implantation at RT. The shift of the Fano interference allowed us to calculate the free carriers’ density in each sample. The lowest value was found for the sample implanted at RT. The gettering sites can act as majority carrier traps and reducers of recombination processes, which can be interesting for devices designed for the detection of radiations.