A Comparison of Transient Boron Diffusion in Silicon, Silicon Carbide and Diamond

Margareta K. Linnarsson; J. Isberg; Adolf Schöner; Anders Hallén

doi:10.4028/www.scientific.net/MSF.600-603.453

Paper Titles

Identification of Neutral Carbon Vacancy-Carbon Anti-Site Complex by Low Temperature Photoluminescence Spectroscopy
p.437

Ionization Energies of Phosphorus Donors in 6H-SiC
p.441

Wave-Function Symmetry and the Properties of Shallow P Donors in 4H SiC
p.445

Infrared PL Signatures of n-Type Bulk SiC Substrates with Nitrogen Impurity Concentration between 10¹⁶ and 10¹⁷ cm^-3
p.449

A Comparison of Transient Boron Diffusion in Silicon, Silicon Carbide and Diamond
p.453

Diffusion and Electroluminescence Studies of Low Temperature Diffusion of Boron in 3C-SiC
p.457

Raman Investigation of the Effect of Metal Impurities at Gettering Sites on Phonon and Electron Related Properties of 4H-SiC n-n⁺ Junctions
p.465

Nitrogen Passivation of (0001) 4H-SiC Dangling Bonds
p.469

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603A Comparison of Transient Boron Diffusion in...

A Comparison of Transient Boron Diffusion in Silicon, Silicon Carbide and Diamond

Abstract:

The boron diffusion in three kinds of group IV semiconductors: silicon, silicon carbide and synthetic diamond has been studied by secondary ion mass spectrometry. Ion implantation of 300 keV, 11B-ions to a dose of 21014 cm-2 has been performed. The samples are subsequently annealed at temperatures ranging from 800 to 1650 °C for 5 minutes up to 8 hours. In silicon and silicon carbide, the boron diffusion is attributed to a transient process and the level of out-diffusion is correlated to intrinsic carrier concentration. No transient, out-diffused, boron tail is revealed in diamond at these temperatures.