A Comparison of Transient Boron Diffusion in Silicon, Silicon Carbide and Diamond

Abstract:

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The boron diffusion in three kinds of group IV semiconductors: silicon, silicon carbide and synthetic diamond has been studied by secondary ion mass spectrometry. Ion implantation of 300 keV, 11B-ions to a dose of 21014 cm-2 has been performed. The samples are subsequently annealed at temperatures ranging from 800 to 1650 °C for 5 minutes up to 8 hours. In silicon and silicon carbide, the boron diffusion is attributed to a transient process and the level of out-diffusion is correlated to intrinsic carrier concentration. No transient, out-diffused, boron tail is revealed in diamond at these temperatures.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

453-456

DOI:

10.4028/www.scientific.net/MSF.600-603.453

Citation:

M. K. Linnarsson et al., "A Comparison of Transient Boron Diffusion in Silicon, Silicon Carbide and Diamond", Materials Science Forum, Vols. 600-603, pp. 453-456, 2009

Online since:

September 2008

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Price:

$35.00

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