Identification of Neutral Carbon Vacancy-Carbon Anti-Site Complex by Low Temperature Photoluminescence Spectroscopy

John W. Steeds

doi:10.4028/www.scientific.net/MSF.600-603.437

Paper Titles

Search for Hydrogen Related Defects in p-Type 6H and 4H-SiC
p.421

Carrier Removal in Electron Irradiated 4H and 6H SiC
p.425

Evolution of D₁-Defect Center in 4H-SiC during High Temperature Annealing
p.429

The Formation and Annealing of Carbon Interstitial-Related Complexes in Electron-, Proton- and Helium Irradiated 4H SiC
p.433

Identification of Neutral Carbon Vacancy-Carbon Anti-Site Complex by Low Temperature Photoluminescence Spectroscopy
p.437

Ionization Energies of Phosphorus Donors in 6H-SiC
p.441

Wave-Function Symmetry and the Properties of Shallow P Donors in 4H SiC
p.445

Infrared PL Signatures of n-Type Bulk SiC Substrates with Nitrogen Impurity Concentration between 10¹⁶ and 10¹⁷ cm^-3
p.449

A Comparison of Transient Boron Diffusion in Silicon, Silicon Carbide and Diamond
p.453

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Identification of Neutral Carbon Vacancy-Carbon...

Identification of Neutral Carbon Vacancy-Carbon Anti-Site Complex by Low Temperature Photoluminescence Spectroscopy

Abstract:

A common set of optical centres found in photoluminescence spectra of electron irradiated 4H SiC is interpreted as originating in neutral carbon-vacancy carbon anti-site pairs.

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Periodical:

Materials Science Forum (Volumes 600-603)

Pages:

437-440

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.600-603.437

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Online since:

September 2008

Authors:

John W. Steeds

Keywords:

Anti-Site Defect, Deep Level, Photoluminescence (PL), Vacancy Complexes

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