Wave-Function Symmetry and the Properties of Shallow P Donors in 4H SiC

Ivan G. Ivanov; C. Persson; Anne Henry; Erik Janzén

doi:10.4028/www.scientific.net/MSF.600-603.445

Paper Titles

Evolution of D₁-Defect Center in 4H-SiC during High Temperature Annealing
p.429

The Formation and Annealing of Carbon Interstitial-Related Complexes in Electron-, Proton- and Helium Irradiated 4H SiC
p.433

Identification of Neutral Carbon Vacancy-Carbon Anti-Site Complex by Low Temperature Photoluminescence Spectroscopy
p.437

Ionization Energies of Phosphorus Donors in 6H-SiC
p.441

Wave-Function Symmetry and the Properties of Shallow P Donors in 4H SiC
p.445

Infrared PL Signatures of n-Type Bulk SiC Substrates with Nitrogen Impurity Concentration between 10¹⁶ and 10¹⁷ cm^-3
p.449

A Comparison of Transient Boron Diffusion in Silicon, Silicon Carbide and Diamond
p.453

Diffusion and Electroluminescence Studies of Low Temperature Diffusion of Boron in 3C-SiC
p.457

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Wave-Function Symmetry and the Properties of Shallow P Donors in 4H SiC

Abstract:

A new investigation on the optical properties of the phosphorus-bound excitons is presented. Arguments are given in favor of the possibility of degenerate donor state for phosphorus substituting Si atom on hexagonal site. On the base of a simple model, it is shown that the experimental spectra also provide evidence in favor of this possibility. The possibility for violation of the Haynes rule in the case of phosphorus donors on the two inequivalent sites is indicated.