Wave-Function Symmetry and the Properties of Shallow P Donors in 4H SiC

Abstract:

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A new investigation on the optical properties of the phosphorus-bound excitons is presented. Arguments are given in favor of the possibility of degenerate donor state for phosphorus substituting Si atom on hexagonal site. On the base of a simple model, it is shown that the experimental spectra also provide evidence in favor of this possibility. The possibility for violation of the Haynes rule in the case of phosphorus donors on the two inequivalent sites is indicated.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

445-448

DOI:

10.4028/www.scientific.net/MSF.600-603.445

Citation:

I. G. Ivanov et al., "Wave-Function Symmetry and the Properties of Shallow P Donors in 4H SiC", Materials Science Forum, Vols. 600-603, pp. 445-448, 2009

Online since:

September 2008

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Price:

$35.00

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