The Formation and Annealing of Carbon Interstitial-Related Complexes in Electron-, Proton- and Helium Irradiated 4H SiC

John W. Steeds

doi:10.4028/www.scientific.net/MSF.600-603.433

Paper Titles

Effect of the Schottky Barrier Height on the Detection of Midgap Levels in 4H-SiC by Deep Level Transient Spectroscopy
p.417

Search for Hydrogen Related Defects in p-Type 6H and 4H-SiC
p.421

Carrier Removal in Electron Irradiated 4H and 6H SiC
p.425

Evolution of D₁-Defect Center in 4H-SiC during High Temperature Annealing
p.429

The Formation and Annealing of Carbon Interstitial-Related Complexes in Electron-, Proton- and Helium Irradiated 4H SiC
p.433

Identification of Neutral Carbon Vacancy-Carbon Anti-Site Complex by Low Temperature Photoluminescence Spectroscopy
p.437

Ionization Energies of Phosphorus Donors in 6H-SiC
p.441

Wave-Function Symmetry and the Properties of Shallow P Donors in 4H SiC
p.445

Infrared PL Signatures of n-Type Bulk SiC Substrates with Nitrogen Impurity Concentration between 10¹⁶ and 10¹⁷ cm^-3
p.449

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The Formation and Annealing of Carbon Interstitial-Related Complexes in Electron-, Proton- and Helium Irradiated 4H SiC

Abstract:

Local vibrational mode energies of optical centres, obtained by low-temperature photoluminescence experiments, are compared with the results of published local density approximation calculations to arrive at atomic models for the carbon interstitial-related defects responsible for the light emission.