The Formation and Annealing of Carbon Interstitial-Related Complexes in Electron-, Proton- and Helium Irradiated 4H SiC
Local vibrational mode energies of optical centres, obtained by low-temperature photoluminescence experiments, are compared with the results of published local density approximation calculations to arrive at atomic models for the carbon interstitial-related defects responsible for the light emission.
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
J. W. Steeds "The Formation and Annealing of Carbon Interstitial-Related Complexes in Electron-, Proton- and Helium Irradiated 4H SiC", Materials Science Forum, Vols. 600-603, pp. 433-436, 2009