The Formation and Annealing of Carbon Interstitial-Related Complexes in Electron-, Proton- and Helium Irradiated 4H SiC

Abstract:

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Local vibrational mode energies of optical centres, obtained by low-temperature photoluminescence experiments, are compared with the results of published local density approximation calculations to arrive at atomic models for the carbon interstitial-related defects responsible for the light emission.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

433-436

DOI:

10.4028/www.scientific.net/MSF.600-603.433

Citation:

J. W. Steeds "The Formation and Annealing of Carbon Interstitial-Related Complexes in Electron-, Proton- and Helium Irradiated 4H SiC", Materials Science Forum, Vols. 600-603, pp. 433-436, 2009

Online since:

September 2008

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$35.00

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