Origin of Giant Step Bunching on 4H-SiC (0001) Surfaces

Abstract:

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To elucidate the origin of giant step bunching on 4˚ off-axis 4H-SiC (0001) faces, we carried out hydrogen etching and epitaxial growth under various conditions. We found that giant step bunching occurs during hydrogen etching and epitaxial growth at extremely low or high C/Si ratios, i.e., with an excessive supply of SiH4 or C3H8. From these results, we have proposed that the origins of giant step bunching are asymmetry in the step kinetics in etching and Si or C cluster generation on terraces during growth.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

473-476

DOI:

10.4028/www.scientific.net/MSF.600-603.473

Citation:

Y. Ishida et al., "Origin of Giant Step Bunching on 4H-SiC (0001) Surfaces", Materials Science Forum, Vols. 600-603, pp. 473-476, 2009

Online since:

September 2008

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Price:

$35.00

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