Generation and Recombination Carrier Lifetimes in 4H SiC Epitaxial Wafers

Gil Yong Chung; Mark J. Loboda; M.J. Marinella; D.K. Schroder; Paul B. Klein; Tamara Isaacs-Smith; J.W. Williams

doi:10.4028/www.scientific.net/MSF.600-603.485

Paper Titles

Nitrogen Passivation of (0001) 4H-SiC Dangling Bonds
p.469

Origin of Giant Step Bunching on 4H-SiC (0001) Surfaces
p.473

Enhanced Annealing of the Main Lifetime Limiting Defect in Thick 4H-SiC Layers
p.477

Impact of 4H-SiC Substrate Defectivity on Epilayer Injected Carrier Lifetimes
p.481

Generation and Recombination Carrier Lifetimes in 4H SiC Epitaxial Wafers
p.485

Variations in the Measured Carrier Lifetimes of n^- 4H-SiC Epilayers
p.489

Investigation of the Internal Carrier Distribution in 4H-SiC Pin-Diodes by Laser Absorption Experiments
p.493

Computational Evaluation of Electrical Conductivity on SiC and the Influence of Crystal Defects
p.497

Characterization of Electrical Properties in SiC Crystals by Raman Scattering Spectroscopy
p.501

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Generation and Recombination Carrier Lifetimes in...

Generation and Recombination Carrier Lifetimes in 4H SiC Epitaxial Wafers

Abstract:

Compared to silicon, there have been relatively few comparative studies of recombination and carrier lifetimes in SiC. For the first time, both generation and recombination carrier lifetimes are reported from the same areas in 20 m thick 4H SiC n-/n+ epi-wafer structures. The ratio of the generation to recombination lifetime is much different in SiC compared to Si. Activation energy calculated from SiC generation lifetimes shows that traps with energy levels near mid-gap dominate the generation lifetime. Comparison of both generation and recombination lifetimes and dislocation counts measured in the device area show no correlation in either case.