Computational Evaluation of Electrical Conductivity on SiC and the Influence of Crystal Defects

Hideyuki Tsuboi; Megumi Kabasawa; Seika Ouchi; Miki Sato; Riadh Sahnoun; Michihisa Koyama; Nozomu Hatakeyama; Akira Endou; Hiromitsu Takaba; Momoj  Kubo; Carlos A. Del Carpio; Yasuo Kito; Emi Makino; Norikazu Hosokawa; Jun Hasegawa; Shoichi Onda; Akira Miyamoto

doi:10.4028/www.scientific.net/MSF.600-603.497

Paper Titles

Impact of 4H-SiC Substrate Defectivity on Epilayer Injected Carrier Lifetimes
p.481

Generation and Recombination Carrier Lifetimes in 4H SiC Epitaxial Wafers
p.485

Variations in the Measured Carrier Lifetimes of n^- 4H-SiC Epilayers
p.489

Investigation of the Internal Carrier Distribution in 4H-SiC Pin-Diodes by Laser Absorption Experiments
p.493

Computational Evaluation of Electrical Conductivity on SiC and the Influence of Crystal Defects
p.497

Characterization of Electrical Properties in SiC Crystals by Raman Scattering Spectroscopy
p.501

Raman Characteristics of Poly 3C-SiC Thin Films Deposited on AlN Buffer Layer
p.505

Characterization of Electronic Properties of Different SiC Polytypes by All-Optical Means
p.509

The Specific Features of High-Field Transport in SiC Polytypes
p.513

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Computational Evaluation of Electrical...

Computational Evaluation of Electrical Conductivity on SiC and the Influence of Crystal Defects

Abstract:

The main electronic characteristics of silicon carbide (SiC) are its wide energy gap, high thermal conductivity, and high break down electric field which make of it of one of the most appropriate materials for power electronic devices. Previously we reported on a new electrical conductivity evaluation method for nano-scale complex systems based on our original tight-binding quantum chemical molecular dynamics method. In this work, we report on the application of our methodology to various SiC polytypes. The electrical conductivity obtained for perfect crystal models of 3C-, 6H- and 4H-SiC, were equal to 10-20-10-25 S/cm. For the defect including model an extremely large electrical conductivity (of the order of 102 S/cm) was obtained. Consequently these results lead to the conclusion that the 3C-, 6H-, and 4H-SiC polytypes with perfect crystals have insulator properties while the electrical conductivity of the crystal with defect, increases significantly. This result infers that crystals containing defects easily undergo electric breakdown.

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Materials Science Forum (Volumes 600-603)

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497-500

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.600-603.497

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Online since:

September 2008

Authors:

Hideyuki Tsuboi, Megumi Kabasawa, Seika Ouchi, Miki Sato, Riadh Sahnoun, Michihisa Koyama, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoj Kubo, Carlos A. Del Carpio, Yasuo Kito, Emi Makino, Norikazu Hosokawa, Jun Hasegawa, Shoichi Onda, Akira Miyamoto

Keywords:

Crystal Defect, Electrical Conductivity, Monte Carlo Method Simulation, Tight-Binding Quantum Chemical Molecular Dynamic

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