Characterization of Electrical Properties in SiC Crystals by Raman Scattering Spectroscopy

T. Kitamura; Shinichi Nakashima; Tomohisa Kato; K. Kojima; Hajime Okumura

doi:10.4028/www.scientific.net/MSF.600-603.501

Paper Titles

Generation and Recombination Carrier Lifetimes in 4H SiC Epitaxial Wafers
p.485

Variations in the Measured Carrier Lifetimes of n^- 4H-SiC Epilayers
p.489

Investigation of the Internal Carrier Distribution in 4H-SiC Pin-Diodes by Laser Absorption Experiments
p.493

Computational Evaluation of Electrical Conductivity on SiC and the Influence of Crystal Defects
p.497

Characterization of Electrical Properties in SiC Crystals by Raman Scattering Spectroscopy
p.501

Raman Characteristics of Poly 3C-SiC Thin Films Deposited on AlN Buffer Layer
p.505

Characterization of Electronic Properties of Different SiC Polytypes by All-Optical Means
p.509

The Specific Features of High-Field Transport in SiC Polytypes
p.513

Thermal Expansion Coefficients of 6H Silicon Carbide
p.517

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Characterization of Electrical Properties in SiC...

Characterization of Electrical Properties in SiC Crystals by Raman Scattering Spectroscopy

Abstract:

We characterized the 4H- and 6H-SiC bulk crystals with graded doping and epitaxial films with various carrier densities by Raman scattering spectroscopy. Electrical properties such as free carrier density were examined for the SiC crystals through Raman measurements of the A1 LO-phonon plasmon coupled (LOPC) mode and its line shape analysis. The peak frequency and band width of LOPC mode varied with carrier density in the range from 1016 to 1019 cm-3. The line shape analysis revealed that the carrier density in the SiC crystals can be simply estimated from measured frequency shift of LOPC mode for 4H- and 6H-SiC crystals.