The Specific Features of High-Field Transport in SiC Polytypes

Vladimir Ilich Sankin; Pavel P. Shkrebiy; Alla A. Lepneva; M.S. Ramm

doi:10.4028/www.scientific.net/MSF.600-603.513

Paper Titles

Computational Evaluation of Electrical Conductivity on SiC and the Influence of Crystal Defects
p.497

Characterization of Electrical Properties in SiC Crystals by Raman Scattering Spectroscopy
p.501

Raman Characteristics of Poly 3C-SiC Thin Films Deposited on AlN Buffer Layer
p.505

Characterization of Electronic Properties of Different SiC Polytypes by All-Optical Means
p.509

The Specific Features of High-Field Transport in SiC Polytypes
p.513

Thermal Expansion Coefficients of 6H Silicon Carbide
p.517

Studies of Thermal Anisotropy in 4H-, 6H-SiC Bulk Single Crystal Wafers by Photopyroelectric (PPE) Method
p.521

Improvement of the Thermal Conductivity in 4H-SiC Epitaxial Layer by Introducing Gettering Sites
p.525

Optical Study of Ge Incorporation in Cubic SiC Layers Grown by VLS
p.529

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603The Specific Features of High-Field Transport in...

The Specific Features of High-Field Transport in SiC Polytypes

Abstract:

A natural superlattice (NSL) in silicon carbide polytypes is shown to introduce a miniband structure into the conduction band, which leads to a number of effects in phenomena of quantum-mechanical transport and impact ionization when the electric field directed along an axis of NSL (axis C in crystal). These processes are absolutely traditional when the electric field is perpendicularly to this axis. The parallel field phenomena are explained by the effects of the Wannier–Stark localization (WSL) among them the Bloch oscillations effect is most prominent today.