The Specific Features of High-Field Transport in SiC Polytypes

Abstract:

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A natural superlattice (NSL) in silicon carbide polytypes is shown to introduce a miniband structure into the conduction band, which leads to a number of effects in phenomena of quantum-mechanical transport and impact ionization when the electric field directed along an axis of NSL (axis C in crystal). These processes are absolutely traditional when the electric field is perpendicularly to this axis. The parallel field phenomena are explained by the effects of the Wannier–Stark localization (WSL) among them the Bloch oscillations effect is most prominent today.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

513-516

DOI:

10.4028/www.scientific.net/MSF.600-603.513

Citation:

V. I. Sankin et al., "The Specific Features of High-Field Transport in SiC Polytypes", Materials Science Forum, Vols. 600-603, pp. 513-516, 2009

Online since:

September 2008

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Price:

$35.00

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