Characterization of Electronic Properties of Different SiC Polytypes by All-Optical Means

K. Neimontas; Kęstutis Jarašiūnas; Rositza Yakimova; Mikael Syväjärvi; Gabriel Ferro

doi:10.4028/www.scientific.net/MSF.600-603.509

Paper Titles

Investigation of the Internal Carrier Distribution in 4H-SiC Pin-Diodes by Laser Absorption Experiments
p.493

Computational Evaluation of Electrical Conductivity on SiC and the Influence of Crystal Defects
p.497

Characterization of Electrical Properties in SiC Crystals by Raman Scattering Spectroscopy
p.501

Raman Characteristics of Poly 3C-SiC Thin Films Deposited on AlN Buffer Layer
p.505

Characterization of Electronic Properties of Different SiC Polytypes by All-Optical Means
p.509

The Specific Features of High-Field Transport in SiC Polytypes
p.513

Thermal Expansion Coefficients of 6H Silicon Carbide
p.517

Studies of Thermal Anisotropy in 4H-, 6H-SiC Bulk Single Crystal Wafers by Photopyroelectric (PPE) Method
p.521

Improvement of the Thermal Conductivity in 4H-SiC Epitaxial Layer by Introducing Gettering Sites
p.525

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Characterization of Electronic Properties of...

Characterization of Electronic Properties of Different SiC Polytypes by All-Optical Means

Abstract:

We applied a picosecond transient grating technique for studies of nonequilibrium carrier dynamics in differently grown or doped SiC polytypes. Optical carrier injection in 4H-SiC at two different wavelengths (266 and 355 nm) allowed us to vary the depth of the photoexcited region and determine photoelectric parameters of high density (from ~1016 to ~1019 cm-3) carrier plasma in the temperature range 10 – 300 K. A strong decrease of carrier lifetime with increasing nonequlibrium carrier density was found in 4H-SiC samples at 300 K and fitted by bimolecular recombination with coefficient B = 3 × 10-11 cm3 s-1. In 3C-SiC epilayers, the opposite tendency was observed over a wide temperature range and attributed to recharging of defect states.