Raman Characteristics of Poly 3C-SiC Thin Films Deposited on AlN Buffer Layer

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This paper presents the Raman scattering characteristics of poly 3C-SiC thin films deposited on AlN buffer layer by atmospheric pressure chemical vapor deposition (APCVD) using hexamethyldisilane (MHDS) and carrier gases (Ar + H2). The Raman spectra of SiC films deposited on AlN layer of before and after annealings were investigated according to the growth temperature of 3C-SiC. Two strong Raman peaks, which means that poly 3C-SiC admixed with nanoparticle graphite, were measured in them. The biaxial stress of poly 3C-SiC/AlN was calculated as 896 MPa from the Raman shifts of 3C-SiC deposited at 1180 °C on AlN of after annealing.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

505-508

DOI:

10.4028/www.scientific.net/MSF.600-603.505

Citation:

G. S. Chung and J. H. Jeong, "Raman Characteristics of Poly 3C-SiC Thin Films Deposited on AlN Buffer Layer", Materials Science Forum, Vols. 600-603, pp. 505-508, 2009

Online since:

September 2008

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$35.00

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