Studies of Thermal Anisotropy in 4H-, 6H-SiC Bulk Single Crystal Wafers by Photopyroelectric (PPE) Method

Passapong  Wutimakun; Hisashi Miyazaki; Yoichi  Okamoto; Jun Morimoto; Toshihiko Hayashi; Hiromu Shiomi

doi:10.4028/www.scientific.net/MSF.600-603.521

Paper Titles

Raman Characteristics of Poly 3C-SiC Thin Films Deposited on AlN Buffer Layer
p.505

Characterization of Electronic Properties of Different SiC Polytypes by All-Optical Means
p.509

The Specific Features of High-Field Transport in SiC Polytypes
p.513

Thermal Expansion Coefficients of 6H Silicon Carbide
p.517

Studies of Thermal Anisotropy in 4H-, 6H-SiC Bulk Single Crystal Wafers by Photopyroelectric (PPE) Method
p.521

Improvement of the Thermal Conductivity in 4H-SiC Epitaxial Layer by Introducing Gettering Sites
p.525

Optical Study of Ge Incorporation in Cubic SiC Layers Grown by VLS
p.529

SiC Polytype Stability Influenced by Ge Impurities
p.533

Space Charge Waves in 6H-SiC and 4H-SiC
p.537

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Studies of Thermal Anisotropy in 4H-, 6H-SiC Bulk...

Studies of Thermal Anisotropy in 4H-, 6H-SiC Bulk Single Crystal Wafers by Photopyroelectric (PPE) Method

Abstract:

Thermal anisotropy in 4H-, and 6H-SiC bulk single crystal wafers was studied by the PPE method. The thermal diffusivities of the [1-100] and [11-20] orientations (^c-axis) samples were higher than those of the [0001] orientation (//c-axis) samples. Moreover, the thermal anisotropies of the lattice component and the carrier component were analyzed by Raman measurement.