Studies of Thermal Anisotropy in 4H-, 6H-SiC Bulk Single Crystal Wafers by Photopyroelectric (PPE) Method
Thermal anisotropy in 4H-, and 6H-SiC bulk single crystal wafers was studied by the PPE method. The thermal diffusivities of the [1-100] and [11-20] orientations (^c-axis) samples were higher than those of the  orientation (//c-axis) samples. Moreover, the thermal anisotropies of the lattice component and the carrier component were analyzed by Raman measurement.
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
P. Wutimakun et al., "Studies of Thermal Anisotropy in 4H-, 6H-SiC Bulk Single Crystal Wafers by Photopyroelectric (PPE) Method ", Materials Science Forum, Vols. 600-603, pp. 521-524, 2009