Studies of Thermal Anisotropy in 4H-, 6H-SiC Bulk Single Crystal Wafers by Photopyroelectric (PPE) Method

Abstract:

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Thermal anisotropy in 4H-, and 6H-SiC bulk single crystal wafers was studied by the PPE method. The thermal diffusivities of the [1-100] and [11-20] orientations (^c-axis) samples were higher than those of the [0001] orientation (//c-axis) samples. Moreover, the thermal anisotropies of the lattice component and the carrier component were analyzed by Raman measurement.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

521-524

DOI:

10.4028/www.scientific.net/MSF.600-603.521

Citation:

P. Wutimakun et al., "Studies of Thermal Anisotropy in 4H-, 6H-SiC Bulk Single Crystal Wafers by Photopyroelectric (PPE) Method ", Materials Science Forum, Vols. 600-603, pp. 521-524, 2009

Online since:

September 2008

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Price:

$35.00

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