Space Charge Waves in 6H-SiC and 4H-SiC

Alexander A. Lebedev; M. Lemmer; B. Hilling; M. Wohlecke; Mirco Imlau; V.V. Bryksin; M. Petrov

doi:10.4028/www.scientific.net/MSF.600-603.537

Paper Titles

Studies of Thermal Anisotropy in 4H-, 6H-SiC Bulk Single Crystal Wafers by Photopyroelectric (PPE) Method
p.521

Improvement of the Thermal Conductivity in 4H-SiC Epitaxial Layer by Introducing Gettering Sites
p.525

Optical Study of Ge Incorporation in Cubic SiC Layers Grown by VLS
p.529

SiC Polytype Stability Influenced by Ge Impurities
p.533

Space Charge Waves in 6H-SiC and 4H-SiC
p.537

Galvanomagnetic Properties of 3C-SiC/6H-SiC Heterostructures
p.541

Rapid Characterization of SiC Crystals by Full-Wafer Photoluminescence Imaging under Below-Gap Excitation
p.545

Mapping of Defects in Large-Area Silicon Carbide Wafers via Photoluminescence and its Correlation with Synchrotron White Beam X-Ray Topography
p.549

Imaging and Metrology of Silicon Carbide Wafers by Laser-Based Optical Surface Inspection System
p.553

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Space Charge Waves in 6H-SiC and 4H-SiC

Space Charge Waves in 6H-SiC and 4H-SiC

Abstract:

Resonant excitation of space charge waves (SCW) by means of an oscillating light pattern has been investigated in hexagonal silicon carbide with 4H and 6H stacking sequence. The experimental data can be explained by the existence of trap recharging waves in the 4H-SiC sample and damped forced charge-density waves in the 6H-SiC sample.