Space Charge Waves in 6H-SiC and 4H-SiC

Abstract:

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Resonant excitation of space charge waves (SCW) by means of an oscillating light pattern has been investigated in hexagonal silicon carbide with 4H and 6H stacking sequence. The experimental data can be explained by the existence of trap recharging waves in the 4H-SiC sample and damped forced charge-density waves in the 6H-SiC sample.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

537-540

DOI:

10.4028/www.scientific.net/MSF.600-603.537

Citation:

A. A. Lebedev et al., "Space Charge Waves in 6H-SiC and 4H-SiC", Materials Science Forum, Vols. 600-603, pp. 537-540, 2009

Online since:

September 2008

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Price:

$35.00

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