Rapid Characterization of SiC Crystals by Full-Wafer Photoluminescence Imaging under Below-Gap Excitation

H. Isono; Michio Tajima; Norihiro Hoshino; H. Sugimoto

doi:10.4028/www.scientific.net/MSF.600-603.545

Paper Titles

Optical Study of Ge Incorporation in Cubic SiC Layers Grown by VLS
p.529

SiC Polytype Stability Influenced by Ge Impurities
p.533

Space Charge Waves in 6H-SiC and 4H-SiC
p.537

Galvanomagnetic Properties of 3C-SiC/6H-SiC Heterostructures
p.541

Rapid Characterization of SiC Crystals by Full-Wafer Photoluminescence Imaging under Below-Gap Excitation
p.545

Mapping of Defects in Large-Area Silicon Carbide Wafers via Photoluminescence and its Correlation with Synchrotron White Beam X-Ray Topography
p.549

Imaging and Metrology of Silicon Carbide Wafers by Laser-Based Optical Surface Inspection System
p.553

Contactless Topographic Analysis of Locally Inhomogeneous Resistivity in SiC and Cd(Zn)Te
p.557

Evolution and Structure of Graphene Layers on SiC(0001)
p.563

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Rapid Characterization of SiC Crystals by...

Rapid Characterization of SiC Crystals by Full-Wafer Photoluminescence Imaging under Below-Gap Excitation

Abstract:

We demonstrated the rapid and nondestructive observation of structural defects in SiC wafers by full-wafer photoluminescence (PL) imaging under below-gap excitation. The use of visible light emitting diode arrays as an excitation source is essential to the simplification of an optical system and the light excitation covering the whole wafer. We were able to observe the defect-related intensity patterns similar to those obtained by conventional laser-scanning PL mapping. The measurement time of the PL imaging was more than fifty times faster than that of the PL mapping.

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Silicon Carbide and Related Materials 2007

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Materials Science Forum (Volumes 600-603)

Pages:

545-548

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.600-603.545

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Online since:

September 2008

Authors:

H. Isono, Michio Tajima, Norihiro Hoshino, H. Sugimoto

Keywords:

Below-Gap Excitation, Dislocation, Full-Wafer Inspection, Imaging, Mapping, Photoluminescence (PL), Structural Defects

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