Contactless Topographic Analysis of Locally Inhomogeneous Resistivity in SiC and Cd(Zn)Te

Stefan  Mueller; Rudolf Stibal; Wolfgang Jantz

doi:10.4028/www.scientific.net/MSF.600-603.557

Paper Titles

Galvanomagnetic Properties of 3C-SiC/6H-SiC Heterostructures
p.541

Rapid Characterization of SiC Crystals by Full-Wafer Photoluminescence Imaging under Below-Gap Excitation
p.545

Mapping of Defects in Large-Area Silicon Carbide Wafers via Photoluminescence and its Correlation with Synchrotron White Beam X-Ray Topography
p.549

Imaging and Metrology of Silicon Carbide Wafers by Laser-Based Optical Surface Inspection System
p.553

Contactless Topographic Analysis of Locally Inhomogeneous Resistivity in SiC and Cd(Zn)Te
p.557

Evolution and Structure of Graphene Layers on SiC(0001)
p.563

Graphene Layers on Silicon Carbide Studied by Raman Spectroscopy
p.567

Dots Formation by CVD in the SiC-Si Hetero-System
p.571

Electronic Band Structure of Cubic Silicon Carbide Nanowires
p.575

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Contactless Topographic Analysis of Locally...

Contactless Topographic Analysis of Locally Inhomogeneous Resistivity in SiC and Cd(Zn)Te

Abstract:

Contactless topographic resistivity mapping is used to characterize SiC and Cd(Zn)Te wafer material. For locally inhomogeneous material, detailed analysis of the deformed charge transients allows the evaluation of the partial resistivity contributions.