Contactless Topographic Analysis of Locally Inhomogeneous Resistivity in SiC and Cd(Zn)Te

Abstract:

Article Preview

Contactless topographic resistivity mapping is used to characterize SiC and Cd(Zn)Te wafer material. For locally inhomogeneous material, detailed analysis of the deformed charge transients allows the evaluation of the partial resistivity contributions.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

557-560

DOI:

10.4028/www.scientific.net/MSF.600-603.557

Citation:

S. Mueller et al., "Contactless Topographic Analysis of Locally Inhomogeneous Resistivity in SiC and Cd(Zn)Te ", Materials Science Forum, Vols. 600-603, pp. 557-560, 2009

Online since:

September 2008

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.