Contactless Topographic Analysis of Locally Inhomogeneous Resistivity in SiC and Cd(Zn)Te
Contactless topographic resistivity mapping is used to characterize SiC and Cd(Zn)Te wafer material. For locally inhomogeneous material, detailed analysis of the deformed charge transients allows the evaluation of the partial resistivity contributions.
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
S. Mueller et al., "Contactless Topographic Analysis of Locally Inhomogeneous Resistivity in SiC and Cd(Zn)Te ", Materials Science Forum, Vols. 600-603, pp. 557-560, 2009