Electronic Band Structure of Cubic Silicon Carbide Nanowires

A. Miranda; A. Estrella Ramos; M. Cruz Irisson

doi:10.4028/www.scientific.net/MSF.600-603.575

Paper Titles

Contactless Topographic Analysis of Locally Inhomogeneous Resistivity in SiC and Cd(Zn)Te
p.557

Evolution and Structure of Graphene Layers on SiC(0001)
p.563

Graphene Layers on Silicon Carbide Studied by Raman Spectroscopy
p.567

Dots Formation by CVD in the SiC-Si Hetero-System
p.571

Electronic Band Structure of Cubic Silicon Carbide Nanowires
p.575

Theoretical Comparison of 3C-SiC and Si Nanowire FETs in Ballistic Regime
p.579

Crystalline Recovery after Activation Annealing of Al Implanted 4H-SiC
p.585

Dynamical Simulation of SiO₂/4H-SiC Interface on C-Face Oxidation Process: From First Principles
p.591

Influence of the Oxidation Temperature and Atmosphere on the Reliability of Thick Gate Oxides on the 4H-SiC C(000-1) Face
p.597

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Electronic Band Structure of Cubic Silicon Carbide Nanowires

Abstract:

In this work, the effects of the diameter and morphology on the electronic band structure of hydrogenated cubic silicon carbide (b-SiC) nanowires is studied by using a semiempirical sp3s* tight-binding (TB) approach applied to the supercell model, where the Si- and C-dangling bonds on the surface are passivated by hydrogen atoms. Moreover, TB results (for the bulk) are compared with density functional calculations in the local density approximation. The results show that though surface morphology modifies the band gap, the change is more systematic with the thickness variation. As expected, hydrogen saturation induces a broadening of the band gap energy because of the quantum confinement effect.