Crystalline Recovery after Activation Annealing of Al Implanted 4H-SiC

Abstract:

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Crystalline recovery mechanism in the activation annealing process of Al implanted 4H-SiC crystals were experimentally investigated. Annealing temperature and annealing time dependence of acceptor activation and activated hole’s behavior were examined. Poly-type recovery from the implantation induced lattice disordering during the annealing was investigated. The existence of meta-stable crystalline states for acceptor activation, and related scattering centers due to annealing is reported To achieve 100% acceptor activation and to reduce strain after ion implantation, annealing at 2000°C for 10 min. was required.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

585-590

DOI:

10.4028/www.scientific.net/MSF.600-603.585

Citation:

R. Hattori et al., "Crystalline Recovery after Activation Annealing of Al Implanted 4H-SiC", Materials Science Forum, Vols. 600-603, pp. 585-590, 2009

Online since:

September 2008

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Price:

$35.00

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